In this study, CdTe(111) thin films were epitaxially grown on freshly cleaved BaF2 substrate using molecular beam epitaxy (MBE). In situ characterization of reflection high energy electron diffraction (RHEED) reveals the growth mode of transition from 2D to 3D. XRD analysis results verify the single crystalline property of the as-grown films. Theoretical method is adopted to fit the measured near infrared transmission spectrum, revealing a CdTe energy gap of 1.511 eV at room temperature.