A novel asymmetric HALO-doped surrounding-gate MOSFET with gate overlapped lightly-doped drain is presented. The performance of the new structure is studied by developing physics-based analytical models for surface potential, threshold voltage, and subthreshold current. It is found that the new structure can effectively suppress the short-channel effects and the hot-carrier effects, and simultaneously reduce the off-state current. It is also revealed that subthreshold current is a slight function of doping concentration of overlapped region, while work-function of gate electrode has a strong influence on subthreshold current. The accuracy of the analytical model is verified by its good agreement with the three-dimensional numerical device simulator ISE.