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中国物理学会期刊

TiO2/CdSe多层膜结构的制备及光电化学性能研究

CSTR: 32037.14.aps.61.108201

Preparation and photoelectrochemical properties of multilayer TiO2/CdSe structures

CSTR: 32037.14.aps.61.108201
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  • 采用电化学方法在导电的ITO/TiO2 薄膜上沉积了棕红色CdSe薄膜, 并制得TiO2/CdSe多层膜体系,研究了多层膜的微结构和光电化学性能. 实验表明, CdSe薄膜沿着(111)方向择优生长, 多层膜结构的厚度和紫外-可见光吸收强度随着沉积层数的增加而增加. 通过测定多层膜电极的光电化学性能表明, 二层膜体系的开路电压和短路电流密度最大,光电化学性能最好.

     

    The red-brown CdSe thin films are electrochemically deposited on conductive ITO/TiO2 film surfaces, and the multilayer TiO2/CdSe structures are constructed. The microstructures and the photoelectrochemical properties of multilayer TiO2/CdSe structures are investigated. The results show that the CdSe thin films are grown preferentially along the (111) direction. The thickness and UV-Vis absorbance intensity of multilayer films increase with the increase of layer number of TiO2/CdSe structure. The results obtained from photoelectrochemistry measurement indicate that the optimal photoelectrochemical current response and open-circuit voltage are obtained in a biolayer TiO2/CdSe system, which therefore demonstrates the favorable photoelectrochemical properties.

     

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