The resistively detected nuclear magnetic resonance (RDNMR), a high-sensitivity NMR technique developed by Klaus von Klitzing's group in 1988, is used to investigate exotic electron and nuclear spin properties in GaAs two-dimensional electron gases (2DEGs). Because the dynamic nuclear polarization (DNP) approach required for the RDNMR demonstration is strongly dependent on unique material properties of GaAs, this highly-sensitive technique has not yet been applied to 2DEGs confined in other host semiconductors. More recently, we have developed a novel DNP method for demonstration of RDNMR in a 2DEG within the typical narrow-gap semiconductor InSb. In this article, we focus on the discussion of our newly-developed DNP method, experimental details and results as well as future prospects after some preliminary remarks on the principles of RDNMR and DNP.