搜索

x
中国物理学会期刊

钛离子辐照对MgB2超导薄膜的载流能力和磁通钉扎能力的影响

CSTR: 32037.14.aps.61.197401

The effects of Ti ion-irradiation on critical current and flux pinning in MgB2 thin film

CSTR: 32037.14.aps.61.197401
PDF
导出引用
  • 利用混合物理化学气相沉积法(hybrid physical-chemical vapor deposition, HPCVD)可以制备出高性能的MgB2超导薄膜, 再对薄膜进行钛(Ti)离子辐照处理.经过辐照处理后的样品被掺入了Ti元素, 与未处理的干净MgB2样品相比,其超导转变温度没有出现大幅度的下降, 而在外加磁场下的临界电流密度得到了明显的提高,同时样品的上临界磁场也得到了提高. 在温度5 K, 外加垂直磁场为4 T的情况下, Ti离子辐照剂量为1 1013/cm2的样品的临界电流密度达到了1.72 105 A/cm2, 比干净的MgB2要高出许多,而其超导转变温度仍能维持在39.9 K的较高水平.

     

    High-quality MgB2 films are fabricated via hybrid physical-chemical vapor deposition (HPCVD) and irradiated by Ti ions. Compared with the unirradiated film, the Ti-irradiated MgB2 film shows a high critical current density (Jc) in magnetic field and also a high upper critical field (Hc2), while the superconducting transition temperature (Tc) does not decrease significantly. The Ti-irradiated film with a best fluence at 1 1013/cm2 shows a high Jc of 1.72 105 A/cm2 in 4 T perpendicular field at a temperature of 5 K and a moderately decreased Tc at 39.9 K.

     

    目录

    /

    返回文章
    返回