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中国物理学会期刊

位移辐射效应对量子阱激光器性能的影响

CSTR: 32037.14.aps.61.214211

Displacement damage effect on the characteristics of quantum well laser

CSTR: 32037.14.aps.61.214211
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  • 使用加速器对量子阱半导体激光器进行了总通量110-16 cm-2的电子辐照实验. 辐射实验结果表明, 在辐射环境下激光器的输出功率下降、阈值电流增加. 从理论上分析了位移效应对量子阱激光器的影响, 并推导了电子通量与相对阈值电流变化、相对输出功率变化的函数关系式. 该公式的计算结果与实验测试结果符合很好, 有效地反映了电子辐照环境下激光器的性能变化趋势. 该公式可用于预测激光器在辐射环境下的性能变化, 有着较大实际应用价值.

     

    Quantum well lasers are irradiated by electrons with a total fluence of 1 10-16 cm-2. The output power is reduced and the threshold current is increased under electron irradiation. The displacement damage effect on quantum well laser is analyzed theoretically and we deduce the relationship between the radiation induced output power and threshold current change and the electron fluence. The formula fits the experiment data very well, and can describe the change trend of the laser performance under electron irradiation, it can also predict the behavior of quantum well laser under radiation environment and is valuable for practical application.

     

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