In the paper, we mainly investigate the SOI MOSFET characteristics of high-k gate dielectric with quantum effect. Self-consistent solutions of Schrdinger and Poisson equation are solved in this paper to obtain carrier wave function in the directiong perpendicular to the SiO2/Si interface and energy level distribution. Based on Young model, the threshold voltage and short-channel effects of SOI MOSFET with high-k gate dielectric are simulated and analyzed. The carrier distribution in inversion layer deviates from the surface with the increase of longitudinal electric field, which is caused by quantum effect. It increases the thickness of effective gate oxide and fluctuation of threshold voltage. Meanwhile, high-k gate dielectric materials can reduce the threshold voltage and restrain the DIBL efficiently. The calculation results matching ISE simulation results show that the model has a high-level accuracy, and faster operation ensures the efficiency of the simulation analysis.