The FexZn1-xO (x=0.80, 0.86, 0.93)amorphous films were fabricated by RF sputtering method. The films each have a strong ferromagnetism at room temperature. The saturation magnetization Ms can reacl 333.29 emu/cm3 in the as-sputtered Fe0.93Zn0.07O. Magnetism is isotropic. The sample obviously exhibits an anomalous Hall effect, which is different from the polycrystalline FexZn1-xO (x≤ 20%). The samples are of n-type semiconductor, with a carrier concentration of about 1019—1020 cm-3. After being annealed, the samples each present a resistance minimum phenomenon at a low temperature (222 K). The conductive mechanism is of the spin dependent variable range hopping resistance in the low-temperature. The experimental results show that amorphous FeZnO system of high Fe composition is a potential candidate of the new spintronic device materials.