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中国物理学会期刊

Cu(In, Ga)Se2 薄膜在共蒸发"三步法"中的相变过程

CSTR: 32037.14.aps.62.077201

The phase transformation of Cu(In,Ga)Se2 film prepared by three-stage process of co-evaporation

CSTR: 32037.14.aps.62.077201
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  • CIGS薄膜的结晶相是制备高质量薄膜的关键问题. 本文采用共蒸发"三步法"工艺沉积Gu(In, Ga)Se2 (CIGS) 薄膜, 通过X射线衍射仪 (XRD) 和X射线荧光光谱仪 (XRF)、扫描电镜 (SEM) 结合的方法详细研究了"三步法"工艺的相变过程, 并制备出转换效率超过15% 的 CIGS 薄膜太阳电池.

     

    The Cu(In, Ga)Se2 (CIGS) phase transformation during the "three-stage" evaporation is the key problem for obtaining high-quality absorber. Cu(In, Ga)Se2 (CIGS) thin film has been prepared via co-evaporation "three-stage process". The phase transformation was studied by means of XRD, XRF (X-ray fluoroscopy) and SEM. And the efficiency above 15% of CIGS film solar cell was obtained succossfully.

     

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