In this paper, Ce doped-SiC nanowires were prepared by chemical vapor reaction technique at the different synthesis temperatures, and the field emission (FE) properties of the nanowires were measured. The products were characterized by scanning electron microscope (SEM), transmission electron microscope (TEM), selected area electron diffraction (SAED) and X-ray diffraction (XRD). The results suggested that the products were β-SiC, the nanowires become bending and the content of Ce reduces with increasing temperature; the values of the turn-on and threshold field increase at first and then decrease. When the synthesis temperature is 1250 ℃, the content of Ce is 0.27 at%, the turn-on and threshold fields of the product are 2.5 V/μm and 5.2 V/μm.