Raman spectroscopy has become a key way for characterizing and studying disorder in graphene, due to its nondestructive, rapid and sensitive technique. In this paper, ion implantation is used to produce the structural defects in single-layer graphene (SLG) and bi-layer graphene (BLG). The first- and second-order modes of ion-implanted SLG and BLG and their physical origins were studied by Raman spectroscopy. The dependence of dispersive frequency of first- and second-order modes in SLG and BLG on the excitation energy was discussed in detail. Results show that the ～2450 cm-1 peak is the combination mode of the D mode at ～1350 cm-1 and the D" mode at ～1150 cm-1.