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中国物理学会期刊

基于模拟电路的新型忆感器等效模型

CSTR: 32037.14.aps.62.158501

A novel meminductor emulator based on analog circuits

CSTR: 32037.14.aps.62.158501
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  • 本文首先利用光敏电阻阻值的可控性, 建立了磁通控制型忆阻器的等效电路模型. 通过对忆感器和忆阻器间转换关系的分析, 采用模拟电子元器件设计了磁通控制型忆感器的实用等效电路模型, 给出了理论分析并结合Pspice软件进行了仿真验证. 忆感器等效电路模型的韦安关系展现出典型的非线性磁滞回线特性. 最后, 运用实验手段研究了正弦波和三角波两种典型电压信号激励下忆感器与RC串联后电路的动态特征, 证明了本文提出忆感器等效电路模型的有效性.

     

    Meminductor, a nonlinear device with memory ability and controllable meminductance, was generalized on the basis of the conception of memristor. Currently, meminductor is still unavailable on the market. Therefore, in order to investigate its properties and potential application, designing electronic emulator is of significant importance. In this paper, a flux-controlled memristive emulator using ligh-dependent resistor (LDR) is proposed and the mutator for transferring memristor into a flux controlled meminductor is described, of which the realization is on the basis of two current conveyor chips and operational amplifiers. Results of Pspice simulation and hardware experiments indicate that the current-flux characteristic of the meminductor is a frequency-dependent pinched loop, like an inclined number “8”. To confirm the effectiveness and correctness, the proposed emulator is analyzed theoretically and tested experimentally as it is connected in an RLMC series circuit. The dynamic behaviors of the RLMC circuit are analyzed and observed. All the results manifest that this newly proposed emulator is capable of simulating a nonlinear meminductor and can be applied to the analog circuit design.

     

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