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中国物理学会期刊

高亮度蓝绿色长余辉材料Ba4 (Si3O8)2:Eu2+, Pr3+的发光性能及其余辉机理研究

CSTR: 32037.14.aps.63.077804

Bluish-green high-brightness long persistent luminescence materials Ba4(Si3O8)2:Eu2+Pr3+, and the afterglow mechanism

CSTR: 32037.14.aps.63.077804
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  • 通过高温固相法在还原气体保护下合成Ba4(Si3O8)2:Eu2+,Pr3+样品及一系列参比样品. 分别利用两种模式测得光致发光与余辉光谱. 结果显示:光致发光与余辉的发光中心均是Eu2+离子;共掺Pr3+在基质中引入新的俘获载流子的缺陷. 热释光与余辉衰减测试表明,与单掺Eu2+所形成的陷阱深度相比,共掺Pr3+导致余辉强度增强是归因于:在浅陷阱区(T1区)的陷阱深度变得更浅. 而余辉时间增长是归因于:在深陷阱区(T2区)深陷阱密度大幅度减少. 同时发现在不同激发波长下激发,余辉机理中的激发路径归结于以下两种过程. 其一:268 nm 激发时,是基质中的电子被直接激发至陷阱. 其二:330 nm或365 nm激发时,电子从Eu2+基态激发至激发态. 随后部分电子通过导带运输被陷阱中心所俘获. 因此,余辉强度的不同归结为以上两种载流子俘获路径的不同.

     

    A bluish-green long persistent luminescence material Ba4(Si3O8)2:Eu2+, Pr3+, was synthesized by traditional solid state method in a reductive atmosphere According to the photoluminescence and afterglow spectra measurement, the emission center is the cation Eu2+ in the photoluminescence and afterglow procedure. The Pr3+ co-doped sample forms new defects which could capture current carriers after excitation. On the basis of thermoluminescence and afterglow decay measurement, the afterglow intensity of Pr3+ co-doped sample sharply enhances as compared with Eu2+ doped one, the reason is that the lower depth traps are generated in the shallow trap areas (T1 region). At the same time, the Pr3+ co-doped sample have longer afterglow decay than that doped with only Eu2+; the reason is that the deep traps concentration decreases in the deep trap areas (T2 region). The afterglow mechanism of Pr3+ co-doped sample have two different excitation paths, path 1: the electron of the host is directly projected to traops at 268 nm excitation; path 2 the electron of the Eu2+ corresponds to the transitions from the ground state to the 5d excited state at 330 nm excitation. Then the different afterglow mechanism of phosphor was produced.

     

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