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中国物理学会期刊

Lu3+掺杂对CdO陶瓷电、热输运性能的影响

CSTR: 32037.14.aps.63.178102

Effeet of Lu3+-doping on high-temperature electric and thermal transport properties of CdO

CSTR: 32037.14.aps.63.178102
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  • 利用传统固相烧结法制备了Cd1-xLux O (x=0%,0.1%,0.5%,0.75%,1.0%,1.25%,1.5%,2%)陶瓷样品并研究了Lu3+掺杂对其电、热输运性能的影响. 随着Lu3 +掺杂浓度的增大,Cd1-xLux O样品的室温载流子浓度持续增大而其迁移率表现出先增大后减小的趋势. 在3001000 K测试温度区间内,Cd1-xLux O的电导率表现出金属电导行为且其电导率和热导率均随着Lu3+掺杂浓度的增大而升高;塞贝克系数在整个测试区间内均为负值,其随温度和载流子浓度的变化关系可用自由电子模型描述.

     

    Cd1-xLuxO(x=0%, 0.1%, 0.5%, 0.75%, 1.0%, 1.25%, 1.5%, 2%) ceramics have been synthesized by the traditional solid phase sintering method; and the effects of Lu3+-doping on the electric and thermal transport properties of these samples are investigated. With the increase of Lu3+-doping concentration, the room temperature carrier concentration in Cd1-xLuxO increases while the mobility first increases and then decreases. In the measuring temperature range of 300 to 1000 K, the electric conductivity of Cd1-xLuxO exhibites a metallic conducting behavior, and both their electric conductivity and thermal conductivity increase with the Lu3+-doping concentration. The Seebeck coefficient S of Cd1-xLuxO is negative in the whole measuring temperature range, and the dependence of S on the carrier concentration can be describedby a free electron model.

     

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