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中国物理学会期刊

高能电子照射绝缘样品的泄漏电流特性

CSTR: 32037.14.aps.63.227303

Leakage current characteristics of the insulating sample under high-energy electron irradiation

CSTR: 32037.14.aps.63.227303
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  • 建立了考虑电子散射、输运、俘获和自洽场的数值计算模型, 研究了高能电子束照射下绝缘厚样品的泄漏电流特性, 并采用一个实验平台测量了泄漏电流. 结果表明: 在电子束持续照射下, 电子总产额会下降; 由于电子在样品内部的输运, 样品近表面呈现微弱的正带电, 在样品内部呈现较强的负带电; 样品内部电子会向下输运形成电子束感生电流, 长时间照射下会形成泄漏电流; 随着照射, 泄漏电流逐渐增大并趋于稳定值; 泄漏电流随样品厚度的增大而减小, 随电子束能量、电子束电流的增大而增大.

     

    The leakage current characteristics of an insulating sample under high-energy electron beam irradiation are simulated by a numerical model with taking into account the electron scattering, transport, trapping and self-consistent field.The leakage current is measured by using a detection platform. Results show that under the continuous electron beam irradiation, the total electron yield decreases evidently; because of electron transport, the sample near the surface is positively charged weakly and its interior is negatively charged strongly; some electrons are transported downward, forming the electron beam induced current and the leakage current under the long time irradiation. Under the irradiation, the leakage current increases to a stable level gradually. The leakage current decreases with the increase of sample thickness, but it increases with beam energy and current.

     

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