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中国物理学会期刊

光催化半导体Ag2ZnSnS4的第一性原理研究

CSTR: 32037.14.aps.63.247101

First-principles study of Ag2ZnSnS4 as a photocatalyst

CSTR: 32037.14.aps.63.247101
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  • 通过基于密度泛函理论的第一性原理计算, 对光催化水解半导体Ag2ZnSnS4的改性方案做了理论研究. 在与同类化合物的带边位置比较后发现, Cu与Ge共掺杂能够在Ag2ZnSnS4中实现禁带宽度和带边位置的双重调节, 从而使其能带结构优化到光催化水解最为理想的状态. 另外, CuGaSe2 可与Ag2ZnSnS4形成type-Ⅱ型带阶结构, 制备它们的异质结同样可用于提升其光催化水解性能.

     

    By using the first-principles calculation based on density functional theory, we propose some approaches to improving the efficiency for the photocatalyst Ag2ZnSnS4 from a theoretical aspect. Comparing its band edge positions with those of other similar compounds, we find that Cu, Ge codoping can adjust both the band gaps and band edge positions of Ag2ZnSnS4 at the same time, which can optimize its band structure for water splitting. In addition, Ag2ZnSnS4 has a type-Ⅱ band offset with another photocatalyst CuGaSe2. Preparation of its homojunction can also improve their efficiencies of photocatalysis hydrolyzation.

     

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