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中国物理学会期刊

微纳尺度体点导热的拓扑优化

CSTR: 32037.14.aps.68.20190923

Topology optimization of the volume-to-point heat conduction problem at micro- and nano-scale

CSTR: 32037.14.aps.68.20190923
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  • 体点导热问题是电子器件散热优化方面的基础问题之一, 已有研究大多建立在傅里叶导热定律的基础上, 但随着电子器件的特征尺度降低到微纳米量级, 导热优化需要考虑非傅里叶效应. 本文结合声子玻尔兹曼方程的数值解和对声子平均自由程进行插值的固体各向同性材料惩罚方法, 发展了微纳米尺度下弹道-扩散导热的拓扑优化方法. 在弹道-扩散导热机制下, 体点导热的拓扑优化得到的材料分布明显不同于扩散导热下的树状分布, 且会随努森数的变化而变化, 与拓扑优化的插值方式和声子弹道输运有关. 随着弹道效应的增强, 尺寸效应使得材料分布中微小结构的等效热导率低于粗壮结构, 因而拓扑优化结果朝着增多粗壮结构、减少微小结构的方向发展. 弹道效应足够强时, 填充材料聚集在低温边界附近, 主干和枝合并, 呈团状分布.

     

    The volume-to-point (VP) heat conduction problem is one of the fundamental problems of cooling for electronic devices. The existed reports about the VP problem are mainly based on the Fourier’s law which works well at the macroscopic scale. However, the length scale of modern electronic devices has reduced to micro- and nano-scale, at which optimization methods that are capable of dealing with the non-Fourier heat conduction are desired now. In this paper, phonon Boltzmann transport equation (BTE) and solid isotropic material with penalization (SIMP) method are coupled to develop a topology optimization method for ballistic-diffusive heat conduction. Phonon BTE is transformed into equation of phonon radiative transport, which is solved by the discrete ordinate method. To realize the topology optimization, SIMP method is adopted to penalize the phonon extinction coefficient, which equals to the reciprocal of phonon mean-free-path, and an explicit constraint on the global gradient of the nominal material density is used to ensure the solutions being well-posed and mesh-independent. By using the developed topology optimization method, it is found that the optimal material distributions for the VP problem in ballistic-diffusive heat conduction significantly deviate from the traditional tree-like structure obtained in diffusive heat conduction, and the results vary with the Knudsen number (Kn). This is related to the different coefficient interpolation ways in the SIMP method and phonon ballistic transport. When Kn → 0, instead of converging to the conventional tree-like structure which fully stretches into the interior zone, the new method gradually produces the result obtained by the topology optimization which interpolates the reciprocal of the thermal conductivity in diffusive heat conduction. As Kn increases, the high thermal-conductive filling materials show a trend to gather around the low-temperature boundary, and there are more thick and strong trunk structures, less tiny and thin branch structures in the optimized material distributions. In addition, the ratio of the optimized average temperature to the value of the uniform material distribution \left( T_\rmave,\rmopt^\rm*/T_\rmave,\rmuni^\rm* \right) also increases. The dependence of the topology optimization results on Kn can be attributed to the size effect of the thermal conductivity caused by phonon ballistic transport. In the diffusive heat conduction, filling materials with different length scales have the same efficiency to build high thermal-conductive channels. However, with ballistic effect enhancing, size effect makes the effective thermal conductivities of the branch structure lower than those of the trunk structure, as the former is smaller than the latter. As a result, the branch structures are less efficient compared with the trunk structures in terms of building high thermal-conductive channels, and the optimal material distributions have more trunk structures and fewer branch structures. When the ballistic effect becomes significant enough, say at Kn = 0.1, the topology optimization gets a dough-like material distribution in which branches merge into trunks. The proposed topology optimization method have the potential to provide guidance in designing nanoscale electronic devices for improving the heat dissipation capability.

     

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