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中国物理学会期刊

Y3Fe5O12(YIG)/Pt异质结构中基于超快自旋塞贝克效应产生太赫兹相干辐射研究

CSTR: 32037.14.aps.69.20200733

Terahertz emission from Y3Fe5O12(YIG)/Pt heterostructures via ultrafast spin Seebeck effect

CSTR: 32037.14.aps.69.20200733
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  • 铁磁/非磁异质结构中的超快自旋流-电荷流转换实现相干太赫兹辐射得到了广泛研究. 热自旋电子学结合了热输运与磁输运, 可以有效地产生和探测自旋的非平衡输运. 本文利用飞秒激光脉冲激发铁磁绝缘体钇铁石榴石(Y3Fe5O12, YIG)/Pt异质结构, 通过超快自旋塞贝克效应(SSE)产生太赫兹(THz)相干辐射. 实验中, THz脉冲的相位随外加磁场和激光入射样品顺序的反转而反转, 表明THz辐射与界面温度梯度的方向密切相关. 为了考察界面对THz辐射性能的影响, 系统地研究了YIG/Pt异质结构不同退火处理后的THz辐射情况. 实验发现, 生长在Gd3Ga5O12 (GGG)衬底上的YIG/Pt经退火处理后再原生一层Pt膜, 其THz辐射强度提高了一个数量级. 归因于退火后增强了YIG/Pt界面的自旋混合电导率. 此外, 还研究了生长在高阻Si衬底上退火后优化结构的能量密度与THz辐射强度的关系, 拟合得到饱和能量密度约为1.4 mJ/cm2. 实验结果表明, YIG/Pt异质结构的界面调控能够优化THz辐射特性, 为基于超快SSE自旋电子学太赫兹发射器开辟了新的途径.

     

    Recently, ferromagnetic/non-magnetic heterostructures have been widely studied for the generation of terahertz (THz) emitter based on spin-to-charge conversion. Actually, thermal spintronics effectively combines thermal transport with magnetism for creating and detecting non-equilibrium spin transport. A spin current or voltage can be induced by a temperature bias applied to a ferromagnetic material, which is called spin Seebeck effect (SSE). In this paper, we present a SSE based THz emission by using the heterostructures made of insulating ferrimagnet yttrium iron garnet (Y3Fe5O12, YIG) and platinum (Pt) with large spin orbit coupling. Upon exciting the Pt layer with a femtosecond laser pulse, a spin Seebeck current arises, applying a temperature gradient to the interface. Based on the inverse spin Hall effect, the spin Seebeck current is converted into a transient charge current and then yields the THz transients, which are detected by electrooptic sampling through using a ZnTe crystal at room temperature. The polarity of the THz pulses is flipped by 180° when the direction of the external magnetic field is reversed. By changing the direction of the pump beam excitation geometry to vary the sign of the temperature gradient at the YIG/Pt interface, the polarity of the THz signal is reversed. Fast Fourier transformation of the THz signals yields the amplitude spectra centered near 0.6 THz with a bandwidth in a range of 0.1–2.5 THz. We systematically investigate the influence of annealing effect on the THz emission from different YIG/Pt heterostructures. It can be found that the THz radiation is achieved to increase ten times in the YIG/Pt grown on a Gd3Ga5O12 (GGG) substrate through high-temperature annealing. The mechanism of annealing effect can be the increase of the spin mixing conductance of the interface between YIG and Pt. Finally, we investigate the pump fluence dependent THz peak-to-peak values for the annealed YIG/Pt grown on the Si substrate. Due to the spin accumulation effect at the interface of the YIG/Pt heterostructure, the THz radiation intensity gradually becomes saturated with the increase of pump fluence. Our results conclude that annealing optimization is of importance for increasing the THz amplitude, and open a new avenue to the future applications of spintronic THz emitters based on ultrafast SSE.

     

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