The single event effect (SEE) and the total ionizing dose (TID) effect of a commercial enhancement mode gallium nitride (GaN) high electron nobility transistor (HEMT) with p-type gate structure and cascode structure are studied by using the radiation of heavy ions and ⁶⁰Co gamma in this paper. The safe operating areas ofSEE, the sensitive parameters degradation of TID effect and the SEE and TID characteristics of GaN HEMT device are respectively presented. The experimental results show that the SEE and TID effect have less influence on the p-type gate GaN device. The linear energy transfer (LET) threshold of the single event Burnout effect (SEB) is higher than 37 MeV·cm²/mg and the failure threshold of TID effect is above 1M rad (Si) for p-type gate GaN device. However, the GaN HEMT device with cascode structure is much more sensitive to SEE and TID effect than p-type gate GaN device. Under heavy ions at LET of 22 MeV·cm²/mg and a cumulative dose of 200 krad (Si), the SEB phenomenon and parameters-degradation of cascode-type GaN HEMT are respectively observed. Besides, the circuit structure of the cascode-type GaN HEMT device is analyzed by using metallographic microscope imaging and focused ions beam technology. It reveals the possible reason why it is sensitive to SEB and TID for cascode-type GaN HEMT. These results show that the extra carriers caused by heavy ion radiation can tunnel the Schottky barrier formed by gate metal and AlGaN layer, leading to a large source-drain current in GaN HEMT device. Meanwhile, it is shown that the metal oxide semiconductor field-effect transistor in cascode circuit for TP90H180PS GaN HEMT may be the main reason why the cascode-type GaN HEMT is sensitive to TID.