In this work, Ta/BaTiO₃/Al₂O₃ multi-layer thin film is deposited on indium tin oxide substrates by using the magnetron sputtering technology. Obvious resistive switching performance can be observed by increasing the compliance current. Ohmic and space charge limited current conduction mechanisms are demonstrated in Ta/BaTiO₃/Al₂O₃. The reproducible and stable resistive switching behaviors in Ta/BaTiO₃/Al₂O₃/ITO device at I_cc = 10^–2 A are reported. The results show that no obvious degradation is found after 365 successive cycles tests.