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中国物理学会期刊

表面修饰工程协同优化Bi2Te3基微型热电器件的界面性能

CSTR: 32037.14.aps.71.20220549

Interface performance of Bi2Te3-based micro thermoelectric devices optimized synergistically by surface modification engineering

CSTR: 32037.14.aps.71.20220549
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  • 热电器件微型化对组成热电元件的界面性能提出了更高要求, 获得低的界面接触电阻率和高的界面结合强度的异质结合界面, 是成功制备高性能、高可靠性Bi2Te3基微型热电器件的前提条件. 本研究采用酸洗方法对Bi0.4Sb1.6Te3材料进行表面修饰, 实现了Bi0.4Sb1.6Te3/Ni热电元件界面性能的协同优化. 酸洗过程有效调控了Bi0.4Sb1.6Te3材料的表面功函数, 显著降低了Ni层与Bi0.4Sb1.6Te3材料间的接触势垒, 从未酸洗处理的0.22 eV降至0.02 eV, 势垒的降低使界面接触电阻率从未酸洗处理的14.2 μΩ·cm2大幅降至0.22 μΩ·cm2. 此外, 酸洗过程还能有效调控基体表面粗糙度, 在基体表面形成2—5 μm的V型凹坑, 产生钉扎效应, 极大地增强了材料表面与Ni层的物理结合, 与约50 nm厚Ni/Bi0.4Sb1.6Te3界面扩散反应区形成的冶金结合共同作用, 使界面结合强度从未酸洗处理的7.14 MPa大幅增至22.34 MPa. 这种优异的界面性能在微型热电器件中得到了进一步证实, 采用该工艺处理后热电元件制备的4.7 × 4.9 mm2微型热电器件, 在热面温度300 K下的最大制冷温差达到56.5 K, 在10 K温差下最大输出功率达到882 μW. 该研究为实现界面性能的协同优化提供了一种新策略, 并为微型热电器件的性能优化开辟了新途径.

     

    The miniaturization of thermoelectric devices raises a strong requirement for the excellent interfacial properties of thermoelectric elements. Thus, achieving a heterogeneous interface with low interfacial contact resistivity and high interfacial bonding strength is a prerequisite for the successful fabrication of high-performance and high-reliability Bi2Te3-based micro thermoelectric devices. In this work, we adopt the acid pickling method to modify the surface structure of Bi0.4Sb1.6Te3 material to synergistically optimize the interfacial properties of Bi0.4Sb1.6Te3/Ni thermoelectric elements. The acid pickling process effectively modulates the work function of Bi0.4Sb1.6Te3 material, which dramatically reduces the contact barrier height of Ni/Bi0.4Sb1.6Te3 heterojunction from 0.22 to 0.02 eV. As a consequence, the corresponding interfacial contact resistivity of the element is greatly reduced from 14.2 to 0.22 μΩ·cm2. Moreover, the acid pickling process effectively adjusts the surface roughness of the matrix, forming a V-shaped pit of 2–5 μm in depth on the substrate surface and leading to a pinning effect. This significantly enhances the physical bonding between the material surface and the Ni layer, which, together with the metallurgical bond formed by the interfacial diffusion reaction zone of about 50-nm-thick Ni/Bi0.4Sb1.6Te3, greatly enhances the interfacial bond strength from 7.14 to 22.34 MPa. The excellent interfacial properties are further validated by the micro-thermoelectric devices. The maximum cooling temperature difference of 4.7 mm× 4.9 mm micro thermoelectric device fabricated by this process achieves 56.5 K, with hot side temperature setting at 300 K, and the maximum output power reaches 882 μW under the temperature gradient of 10 K. This work provides a new strategy for realizing the synergetic optimization of interfacial properties and opens up a new avenue for improving the performance of micro thermoelectric devices.

     

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