With the rapid development of photovoltaic technology, crystalline silicon (c-Si) solar cells, as the mainstream photovoltaic devices, have received significant attention due to their excellent performances. In particular, silicon heterojunction (SHJ) solar cells, tunnel oxide passivated contact (TOPCon), and passivated emitter and rear cell (PERC) represent the cutting-edge technologies in c-Si solar cells. The surface passivation layer of crystalline silicon solar cells, as one of the key factors to improve cell performances, has been closely linked to the development of crystalline silicon solar cells. Due to the complex mechanism of passivation layer and the high requirements of experimental research, achieving high quality surface passivation is challenging. In this paper, the key issues and research progress of interface passivation technologies for SHJ, TOPCon, and PERC solar cells are comprehensively reviewed. Firstly, the research progress of key technological breakthrough in SHJ solar cell is reviewed systematically, and the influences of growth conditions and doping layer on the passivation performances of SHJ solar cell are discussed in detail. Secondly, the important strategies and research achievements for improving the passivation performances of TOPCon and PERC solar cells in the past five years are systematically described. Finally, the development trend of passivation layer technology is prospected. This review provides valuable insights for improving future technology and enhancing performance of c-Si solar cells.