The rapid development of optoelectronic technologies has raised increasingly requirements for the photoelectric properties of semiconductor materials, thereby promoting the exploration of more efficient and controllable modulation strategies. High-pressure technology, as a clean and effective external-field method, can accurately modulate the crystal structure and electronic states of materials. This modulation can induce novel phase transitions and physical effects, thereby significantly improving performance. In recent years, high-pressure technique has emerged as a powerful tool for optimizing photoelectric properties of semiconductor materials, providing new perspectives for enhancing performance and demonstrating significant research value and application potential.

This review paper comprehensively summarizes recent research progress of pressure-induced evolution of photoelectric properties in various material systems, such as two-dimensional transition metal dichalcogenides, metal and non-metal halides, perovskites, and other representative semiconductors. These materials exhibit a wide variety of pressure-induced structural transformations, accompanied by photocurrent enhancement, broadband spectral response, self-powered photoresponse, and polarity reversal. Furthermore, the intrinsic links between these structural evolutions and the corresponding photoelectric behaviors are systematically examined.

Scientific issues and development bottlenecks in this area are also discussed. Despite notable advances, there are still several challenges, including the insufficient understanding of intrinsic correlations between structure and photoelectric properties, the lack of comprehensive evaluation parameters. How to realize pressure-enhanced photoelectric properties for applications under ambient conditions is another key challenge. Addressing these issues will be essential for advancing both fundamental understanding and practical applications.

Overall, pressure modulated photoelectric properties present both significant challenges and exciting opportunities, providing valuable guidance for designing advanced optoelectronic materials and devices.