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中国物理学会期刊

MnBi单晶的自旋重取向与高压调控研究

CSTR: 32037.14.aps.75.20251578

Spin reorientation behavior and pressure-driven tuning of magnetic anisotropy in MnBi single crystals

CSTR: 32037.14.aps.75.20251578
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  • 磁各向异性与自旋重取向是决定永磁体及自旋电子器件中性能的重要物理基础. 然而, 在MnBi永磁材料体系中, Mn 3d-Bi 6p杂化与Bi强自旋-轨道耦合主导的磁各向异性贡献长期竞争, 使其自旋重取向机制备受争议. 本研究通过助熔剂法成功生长毫米级高质量MnBi单晶, 并结合变温磁性表征、电输运、变温X射线衍射及高压调控系统研究了其磁各向异性演化规律. 结果显示, MnBi在约90 K发生由面内至c轴的自旋重取向过程, 同时在140 K附近观察到晶格c/a比值的突变, 这一结构异常先于磁相变发生, 揭示了MnBi存在显著的结构前驱态与晶格-磁性的强耦合行为. 高压研究(0.9—3 GPa)表明, 随着压力升高, 自旋重取向转变温度持续下降, 而c轴方向磁化强度显著增强. 这表明压力通过调节晶格压缩与Mn-Bi轨道杂化强度, 打破Mn-Mn直接交换与自旋-轨道耦合驱动的磁各向异性竞争, 最终稳定c轴取向的磁状态. 本研究明确揭示了MnBi中结构演化、电子杂化与磁各向异性的耦合机制, 提出了通过外场调控磁各向异性的有效策略, 为设计高性能永磁体及自旋电子材料提供了重要启示.

     

    Magnetic anisotropy and spin reorientation transition (SRT) are fundamental physical factors governing magnetic performance and tunability in spintronic applications. By manipulating magnetic anisotropy, one can achieve the controlled switching of magnetization orientation, tuning of coercivity, and optimization of magnetic response behavior. However, in layered MnBi, the competition between Mn 3d-Bi 6p hybridization and the strong spin–orbit coupling (SOC) related to Bi leads to a competition for anisotropy contributions, which causes widespread debate on the microscopic origin of its SRT. In this work, we successfully synthesize millimeter-sized high-quality MnBi single crystals by using a flux method and systematically investigate the evolution of magnetic anisotropy through temperature-dependent magnetometry, transport measurements, variable-temperature X-ray diffraction, and high-pressure experiments. The results reveal that MnBi undergoes a spin reorientation from the in-plane direction to the c-axis at approximately 90 K. At the same time, an abrupt anomaly in the lattice c/a ratio emerges near 140 K prior to the magnetic transition, which indicates the presence of a structural precursor state and a strong coupling between lattice and magnetic degree of freedom. Transport measurements further demonstrate that when the magnetic field is applied parallel to the ab-plane, the magnetoresistance (MR) switches from positive to negative near the SRT, confirming that magnetic reconstruction directly modulates carrier scattering mechanism. Under external pressures ranging from 0.9to 3 GPa, the SRT temperature progressively decreases whereas the magnetization along the c-axis is markedly enhanced. This behavior indicates that pressure modifies the competition between Mn-Bi electronic hybridization and Mn–Mn direct exchange interaction by tuning lattice contraction, ultimately stabilizing the c-axis magnetic orientation. Overall, this study clarifies the coupling effect of structural evolution, electronic hybridization, and magnetic anisotropy in MnBi, and demonstrates that external-field engineering provides an effective route for modulating anisotropy. These findings provide valuable insights for designing high-anisotropy permanent magnets and tunable spintronic materials

     

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