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中国物理学会期刊

Fe3GaTe2/Bi2Te3异质结中拓扑界面耦合调控铁磁性研究

CSTR: 32037.14.aps.75.20251620

Modulation of ferromagnetism via topological interface coupling in Fe3GaTe2/Bi2Te3 heterojunction

CSTR: 32037.14.aps.75.20251620
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  • 拓扑异质结的界面相互作用能够通过界面电荷转移、拓扑表面态诱导等有效调节界面磁有序, 为实现高效、低功耗的磁序操纵提供可靠策略. 本文构筑了室温铁磁体Fe3GaTe2与拓扑绝缘体Bi2Te3的全范德瓦耳斯异质结, 探究了Bi2Te3界面相互作用对Fe3GaTe2磁性的影响规律. 通过不同温度下的微观磁畴演变, 表明拓扑界面能够有效稳定Fe3GaTe2的长程磁有序. 磁光测量进一步验证了异质结构中Fe3GaTe2居里温度提升了约20 K, 并观测到异常的MOKE信号反号行为. 本研究揭示了拓扑界面效应在调控二维磁性中的重要作用, 为开发高性能自旋电子器件提供了实验基础.

     

    The effective manipulation of two-dimensional (2D) magnetic order is crucial for both exploring novel physical phenomena and developing multifunctional magnetic electronic devices. Intrinsic interfacial coupling in van der Waals heterostructures provides a promising pathway for efficient, low-power magnetic manipulation without relying on external fields or charge currents. The strong spin-orbit coupling and topologically protected surface states of topological insulators make the heterostructures based on topological insulators ideal for modulating interface magnetism through mechanisms such as charge transfer or the proximity effect, establishing them as a premier platform for interfacial magnetic control. In this work, a van der Waals heterojunction composed of the ferromagnet Fe3GaTe2 and the topological insulator Bi2Te3 is constructed via mechanical exfoliation and deterministic transfer techniques, and the effect of Bi2Te3 interface interactions on the Fe3GaTe2 magnetism is explored. A comparison of microscopic magnetic domain evolution between pristine Fe3GaTe2 and Bi2Te3/Fe3GaTe2 heterojunction at different temperatures shows a significant enhancement of the magnetic ordering in Fe3GaTe2 by the topological interface. Magneto-optical Kerr effect (MOKE) measurements further confirm that the Curie temperature of the heterojunction increases by approximately 20 K and the Kerr signal exhibits an anomalous sign reversal. These results reveal the significant role of topological interface effects in modulating 2D magnetism, thereby laying experimental foundation for developing high-performance spintronic devices.

     

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