Regulating the number of layers in two-dimensional (2D) materials is a well-known strategy for enhancing the performance of optoelectronic devices. Unfortunately, as the layer number increases, the lifetime of photogenerated carriers often shortens due to narrowing band gap, limiting the optimization of device performance. Polarization in 2D materials, known to inhibit carrier recombination, offers a potential solution to this limitation. Incorporating electrostatic potential difference into layer number regulation may reveal new insights into controlling the photogenerated carrier lifetimes. Recently, the superatomic crystal represented by Re₆Se₈Cl₂ has attracted attention for inducing electrostatic potential difference through asymmetric Cl termination, presenting new opportunities for designing high-performance optoelectronic devices. In this study, we reveal an anomalous layer-dependent behavior of photogenerated carrier lifetime. Specifically, the carrier lifetime increases initially and then decreases as the number of layers increases. This anomaly behavior stems from combined effects: while the band gap of Re₆Se₈Cl₂ decreases exponentially with additional layers, accelerating recombination, electrostatic potential difference driven charge redistribution weakens electron-phonon coupling, suppressing recombination. Our findings suggest that electrostatic potential difference in few-layer materials like Re₆Se₈Cl₂ enhances optoelectronic properties by extending carrier lifetime and improving light absorption.