Photoexcitation delivers energy into the electronic system, generating non-equilibrium carriers in conduction bands (CBs) below the vacuum level (E_V). Once the electron energy exceeds E_V, electrons are generally expected to escape rapidly from the solid. Whether such energetic electrons can couple to crystal-modulated final states (FSs) before photoemission, and how these states can be selectively excited, remain fundamental open questions. Here, using angle-resolved two-photon photoemission (2PPE) spectroscopy, we directly visualize crystal-modulated FSs in bulk 2H-MoS₂ and three other 2H-phase transition-metal dichalcogenides (TMDs). By tuning the excitation photon energy, we identify an energy-resonant CB→FS transition at the Γ point, enabling efficient population of the FS and direct mapping of its electronic structure and excitation pathway. In 2H-MoS₂, the FS exhibits a band minimum located approximately 0.60 eV above the E_V. The FS signal emerges only when the photon energy exceeds ~3.58 eV, corresponding to the threshold for the resonant CB→FS transition. Power-dependent measurements exhibit a quadratic photoemission response, confirming a sequential VB→CB→FS two-photon excitation pathway. First-principles calculations reveal a striking contrast between the CB and FS wavefunctions: whereas the CB wavefunction is primarily localized around atomic sites, the FS wavefunction is distributed throughout the interstitial regions of the hexagonal lattice and possesses pronounced delocalized s-orbital character, providing a favorable transient reservoir for energetic electrons prior to photoemission. Calculated transition dipole moments, together with polarization-dependent measurements, further demonstrate that the CB→FS transition is dominated by in-plane optical coupling. Extending the measurements to 2H-MoSe₂, 2H-WS₂, and 2H-WSe₂, we observe analogous dispersive FSs up to ~1 eV above their respective E_V, establishing crystal-modulated FSs as a universal feature of the high-lying electronic structure of 2H-phase TMDs. Our results reveal previously uncharacterized high-energy electronic states above E_V and establish their energy- and polarization-dependent excitation pathways, providing a microscopic basis for understanding high-energy carrier dynamics, nonlinear photoemission, and surface photochemical processes.