The novel two-dimensional MA₂Z₄ family has attracted significant attention due to its diverse structures and material properties. Among these, the bilayer VSi₂P₄ exhibits simultaneous out-of-plane ferroelectric polarization and interlayer antiferromagnetic coupling in both AB and BA stacking configurations, offering promising prospects for various applications. In this work, based on density functional theory combined with non-equilibrium Green's functions, we investigate the spin transport properties of van der Waals multiferroic devices based on bilayer VSi₂P₄，  considering different electrodes, interfacial coupling, and structural asymmetry. The results show that the spin-filtering effect of bilayer VSi₂P₄ leads to relatively large tunneling magnetoresistance in both Au-VSi₂P₄-Au and TiSe₂-VSi₂P₄-TiSe₂ devices, while the interfacial coupling between electrodes and the barrier layer results in relatively small tunneling electroresistance. By introducing a MoTe₂ interlayer, the tunneling electroresistance of the Au-MoTe₂-VSi₂P₄-MoTe₂-Au device reaches 17.35% and 17.90%, and that of the TiSe₂-MoTe₂-VSi₂P₄ -MoTe₂-TiSe₂ device reaches 46.25% and 49.30%. In the Au-MoTe₂-VSi₂P₄-MoTe₂-TiSe₂ device with asymmetric electrodes, the tunneling electroresistance is further enhanced to 95.3% and 94.0%, while the tunneling magnetoresistance remains relatively large. These findings are expected to advance the development of two-dimensional intrinsic multiferroic tunnel junctions and related in-memory computing devices.