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强磁场中n型锗的横向磁阻

栾心芙

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强磁场中n型锗的横向磁阻

栾心芙

THE TRANSVERSE MAGNETORESISTANCE FOR n-TYPE GERMANIUM IN A STRONG MAGNETIC FIELD

LAN SIN-FU
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  • 本文就声子散射与电离杂质散射的两种散射机构探讨了半导体n型锗的横向磁阻。在简并强磁场情况下,得出声子散射机构在〈111〉,〈110〉和〈100〉三个方向上锗的横向磁阻的表示式。磁阻的平均值的相对大小(ρt)/ρ0:(ρt)/ρ0:(ρt)/ρ0=1:1.7:1.1,并且磁阻具有振荡形式。在非简并量子极限情况下分别对声子散射和杂质散射得出锗的横向磁
    The transverse magnetoresistance of n-type germanium materials for both the acoustic and the ionized impurity scattering mechanisms has been inverstigated. In a degenerative case under a strong magnetic field, the expressions of the magnetoresistance of germanium in the three directions of , , and are obtained with respect to the acoustic scattering. The relative magnitude of the average values of theseresults are (ρt)/ρ0:(ρt)/ρ0:(ρt)/ρ0=1:1.7:1.1. In the nondegenerative quantum-limited case, the expressions of the transverse magnetoresistance of germanium for both acoustic and impurity scattering are obtained respectively. For acoustic scattering ρt/ρ0~H/T and, furthermore, ρt/ρ0 is independent of the direction of the magnetic field; for impurity scattering ρt/ρ0~T/H and ρt/ρ0 is dependent on the direction of the magneticfield except for certain specific case.Among the results, the magnetoresistance for the acoustic scattering in a non-degenerative quantum-limited case is qualitatively in accordance with the experimental results given by Diesel and Love.
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出版历程
  • 收稿日期:  1964-08-21
  • 刊出日期:  2005-08-05

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