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在c向静电场作用下,α-LiIO3单晶的喇曼谱发生“串线”,并且谱线强度改变。本文分析了这一现象的起因:由于离子输运引起的空间电荷涨落使α-LiIO3单晶的极化率张量和喇曼张量主轴方向发生涨落。前者产生o←→e光散射,散射光再发生一次喇曼散射,造成喇曼谱“串线”和谱线强度的改变;后者直接造成喇曼诺“串线”和谱线强度的变化。前者的贡献远大于后者。The "spillover" of the Raman spectral lines and the change of their intensities were observed in a- LiIO3 single crystal under the action of a DC field. They are due to the fluctuation of the polarizability tensor and the Raman tensor of α-LiIO3 single crystal during the transportation of ions. The former induces the o←→e scattering. Sequently, if this o←→e scattering light acts as an incident beam to produce Raman scattering, the phenomena mentioned above could occur. The latter brings about the phenomena directly. The former mechanism is predominant.
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