Zylbersztejn had pointed out that the in homogeneous distribution of carriers in the edge region of the space charge region exerts a disadvantageous influence on the measurement of carrier capture cross sections of deep centers and suggested a method to eliminate this effect. However, his method can only be used to measure carrier capture cross sections at low temperature for quite deep levels. We suggest a new method to remove the harmful impact of inhomogeneous distribution of carriers (including both the inhomogeneous distribution of the carriers in. the edge region and that due to nonuniform shallow donors and acceptors) on the basis of an analysis of the dynamic process of capacitance transient. This method is not subjeer to the serious restriction of the temperature range of measurement and the situation of the levels under measuring. This is important for the study of the temperature dependence of carrier capture cross sections and the tudy of the carrier capture dynamices. As an example. the method has been used to measure the electron capture cross section of gold acceptor in silicon. The results show that the accuracy of measurement is improved.