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中国物理学会期刊

MgⅪ 1s3p-1s4p能级间平均高温及高密度条件下的粒子数反转

CSTR: 32037.14.aps.37.1236

POPULATION INVERSION OF ENERGY LEVELS OF MgXI 1s3p AND 1s4p UNDER THE CONDITION OF AVERAGE HIGH TEMPERATURE AND HIGH ELECTRON DENSITY

CSTR: 32037.14.aps.37.1236
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  • 采用最新设计带侧向喷口的微管靶,当微管内壁平均激光辐照强度约为3.5×1013W·cm-2时,观察到沿整个喷口1s3p 1P00和1s4p 1P00能级间强烈的粒子数反转。测得相应环境等离子体平均电子温度470—520eV,密度约为2×1020cm-3。分析了可能导致高温条件下粒子数反转的机制。

     

    The microtube target with side jet burner is designed. Strong population inversion is observed along the whole side jet burner between the energy leveles of MgXI Is3p 1P00 and Is4p 1P00 while the average laser irradiance reached about 3.5×1013W·cm-2 on the inner wall of the microtube targets. The corresponding environment average electron temperature 470-520 eV and density of 2×10cm-3 of plasma at the inversion area is measured. The possible mechanisms of population inversion under the average high temperature condition has been analysed.

     

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