搜索

x
中国物理学会期刊

Al-Sn合金表面元素深度分布的局域性

CSTR: 32037.14.aps.43.1816

LOCALIZATION OF THE COMPONENT ATOM DEPTH-PROFILES IN Al-Sn ALLOY SURFACE LAYER

CSTR: 32037.14.aps.43.1816
PDF
导出引用
  • 利用微束卢瑟福背散射能谱(M-RBS)分析方法,对Al70Sn30合金表面的两种微相区(Al富集相区和Sn富集相区),在27keVAr+离子轰击(总剂量为1.4×1018Ar+/cm2)前后,分别测定了Sn原子的深度分布。实验结果表明,在Al富集相区和Sn富集相区之间,以及各相区在离子溅射前后,Sn原子浓度深度分布曲线是不相同的。

     

    The Sn atom depth-profiles in the micro-phase region of the Al70Sn30 alloy surface for before and after the 27keV Ar+ ions bombardment have been studied using micro-beam Rutherford backscattering spectroscopy (M-RBS) analysis methods. The experimental results shown that the depth-profiles of the Sn atom between Al-rich phase region and Sn-rich phase region, and these phase regions locate on the unsputtered and sputtered surface are different.

     

    目录

    /

    返回文章
    返回