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利用微束卢瑟福背散射能谱(M-RBS)分析方法,对Al70Sn30合金表面的两种微相区(Al富集相区和Sn富集相区),在27keVAr+离子轰击(总剂量为1.4×1018Ar+/cm2)前后,分别测定了Sn原子的深度分布。实验结果表明,在Al富集相区和Sn富集相区之间,以及各相区在离子溅射前后,Sn原子浓度深度分布曲线是不相同的。The Sn atom depth-profiles in the micro-phase region of the Al70Sn30 alloy surface for before and after the 27keV Ar+ ions bombardment have been studied using micro-beam Rutherford backscattering spectroscopy (M-RBS) analysis methods. The experimental results shown that the depth-profiles of the Sn atom between Al-rich phase region and Sn-rich phase region, and these phase regions locate on the unsputtered and sputtered surface are different.







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