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ZnO压敏陶瓷中的本征缺陷

傅刚 陈志雄 石滨

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ZnO压敏陶瓷中的本征缺陷

傅刚, 陈志雄, 石滨

INTRINSIC DEFECTS IN ZnO VARISTOR CERAMICS

FU GANG, CHEN ZHI-XIONG, SHI BIN
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  • 研究了ZnO-Sb2O3-BaO系和ZnO-Bi2O3-Sb2O3-BaO系压敏陶瓷的介电损耗因子D(tanδ)与频率f的关系。发现不含Bi2O3试样在室温附近出现一新的损耗峰,峰值频率在2MHz左右,对应的电子陷阱能级为0.18eV,分析认为是由于本征缺陷Zni所致。设想Bi离子对Zni
    The relationship between dielectric loss factor D (tanδ) and frequency for ZnO-Sb2O3-BaO and ZnO-Bi2O3-Sb2O3-BaO varistor ceramics has been investigated. A new dielectric loss peak was found near by 2MHz at room temperature for the sample in the absence of Bi2O3, the corresponding electron trapping level was about 0.18 eV, it was considered that the loss peak resulted from intrinsicdefect Zni . It was assumed that the formation of intrinsic defect Zni was restricted by ion Bi, it was consistent with experimental fact that the degradation properties of varistor ceramics under the long duration load voltage are improved with the increasing amount of Bi2O3.
    • 基金项目: 国家自然科学基金资助的课题
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  • 文章访问数:  6879
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  • 被引次数: 0
出版历程
  • 收稿日期:  1995-01-23
  • 刊出日期:  1996-05-20

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