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Sb掺杂Hg1-xCdxTe的光致发光

物理学报, 1997, 46(5): 959-963.
DOI: 10.7498/aps.46.959
CSTR: 32037.14.aps.46.959

PHOTOLUMINESCENCE OF Sb-DOPED Hg1-xCdxTe

Acta Phys. Sin., 1997, 46(5): 959-963.
DOI: 10.7498/aps.46.959
CSTR: 32037.14.aps.46.959
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  • 摘要

    对不同Sb掺杂浓度Hg1-xCdxTe（x≈0.38）样品在3.9—115K的温度范围内进行了光致发光实验测量，观察到与局域激子、带到带和施主受主对有关的辐射复合过程．并用光致发光手段发现Sb掺杂在x≈0.38的Hg1-xCdxTe中引入的约30meV的受主能级

     

    Abstract

    The infrared photoluminescence spectroscopy was performed for Sb-doped Hg1-xCdxTe(x≈0.38)from 3.9K to 115K. The band to band transition,localized exciton and donor acceptor pair(D0A0)related luminescence peaks were observed. The acceptor level which is related to Sb-doping and about 30 meV above the valence band was observed in photoluminescence experiment in Hg1-xCdxTe(x≈0.38).

     

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