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中国物理学会期刊

二维纳米点阵列的Monte-Carlo模拟

CSTR: 32037.14.aps.49.1453

MONTE-CARLO SIMULATION OF TWO DIMENSIONAL ARRAYS

CSTR: 32037.14.aps.49.1453
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  • 介绍了一种利用标准单电子隧穿理论与Monte-Carlo 方法模拟二维量子点阵列的程序.数值计算结果表明,二维量子点阵在低温下有库仑充电行为,其量子功能作用使它显示出可喜的研究价值和应用前景.

     

    In this paper, a single-charge tunneling simulator, the Monte Carlo simulator of two-dimensional quantum dot array using standard single electron tunneling theory and Monte-Carlo method is introduced. The simulated results show that the two-dimensional quantum dot array has Coulomb charging effect at low temperatures. The quantum effect of the dot array exhibits great prospect in research and applications.

     

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