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通过变磁场霍耳测量研究了MBE生长的Hg0.80Mg0.20Te薄膜在15 —250K温度范围内的输运特性.采用迁移率谱(MS)和多载流子拟合过程(MCF)相结合的方法对 实验数据进行了分析，由该方法获得的结果和Shubnikov de Hass(SdH)振荡测量的结果都证 明材料中存在二维(2D)电子和三维(3D)电子.其中2D电子主要来自于Hg1-xMgxTe-CdTe的界面积累层或Hg1-x
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关键词:
- 变磁场霍耳测量 /
- 界面积累层 /
- 二维电子气 /
- Hg1-xMgxTe
The transport properties in Hg0.80Mg0.20Te molecular beam epitaxy film has been studied in the temperature range from 15 to 250K by vari able magnetic-field Hall measurement.The experimental data have been analyzed us ing a hybrid approach consisting of the mobility spectrum(MS) technique followed by a multicarrier fitting(MCF) procedure.Both Shubnikov de Hass(SdH) Measuremen ts and the hybrid approach show two- and three-dimensional electronic behaviors. Experimental results indicate that the two-dimensional electrons are due to an a ccumulation layer near the Hg1-xMgxTe-CdTe interface or th e Hg1-xMgxTe-vacuum interface.Ionized impurity scattering of the three-dimension electron mobility dominates at low temperature(considerin g the screening effect) while lattice scattering dominates above 100K.The scatte ring mechanism in Hg1-xMgxTe is very similar to that in Hg 1-xCdxTe.-
Keywords:
- variable magnetic-field Hall measurement accumulation layer two-dimensional elec tronic gas Hg1-xMgxTe /
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物理学报. 2000, 49(9): 1804-1808.
doi: 10.7498/aps.49.1804.
n-Hg0.80Mg0.20Te界面积累层中二维电子气的输运特性研究
- 收稿日期: 2000-02-19
- 修回日期: 2000-03-30
- 刊出日期: 2000-09-20
摘要: 通过变磁场霍耳测量研究了MBE生长的Hg0.80Mg0.20Te薄膜在15 —250K温度范围内的输运特性.采用迁移率谱(MS)和多载流子拟合过程(MCF)相结合的方法对 实验数据进行了分析，由该方法获得的结果和Shubnikov de Hass(SdH)振荡测量的结果都证 明材料中存在二维(2D)电子和三维(3D)电子.其中2D电子主要来自于Hg1-xMgxTe-CdTe的界面积累层或Hg1-x
-
关键词:
- 变磁场霍耳测量 /
- 界面积累层 /
- 二维电子气 /
- Hg1-xMgxTe
English Abstract
STUDY ON TRANSPORT PROPERTIES OF TWO-DIMENSIONAL ELECTRON GASES IN n-Hg0.80 Mg0.20Te INTERFACE ACCUMULATION LAYER
- Received Date:
19 February 2000
- Accepted Date:
30 March 2000
- Published Online:
20 September 2000
Abstract: The transport properties in Hg0.80Mg0.20Te molecular beam epitaxy film has been studied in the temperature range from 15 to 250K by vari able magnetic-field Hall measurement.The experimental data have been analyzed us ing a hybrid approach consisting of the mobility spectrum(MS) technique followed by a multicarrier fitting(MCF) procedure.Both Shubnikov de Hass(SdH) Measuremen ts and the hybrid approach show two- and three-dimensional electronic behaviors. Experimental results indicate that the two-dimensional electrons are due to an a ccumulation layer near the Hg1-xMgxTe-CdTe interface or th e Hg1-xMgxTe-vacuum interface.Ionized impurity scattering of the three-dimension electron mobility dominates at low temperature(considerin g the screening effect) while lattice scattering dominates above 100K.The scatte ring mechanism in Hg1-xMgxTe is very similar to that in Hg 1-xCdxTe.
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