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Cu掺杂对Kondo绝缘体CeNiSn低温比热的影响

胡小华 陈兆甲 雒建林 王玉鹏 白海洋 金 铎

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Cu掺杂对Kondo绝缘体CeNiSn低温比热的影响

胡小华, 陈兆甲, 雒建林, 王玉鹏, 白海洋, 金 铎

EFFECT OF SUBSTITUTION OF Ni BY Cu ON SPECIFIC HEAT OF CeNiSn

HU XIAO-HUA, CHEN ZHAO-JIA, LUO JIAN-LIN, WANG YU-PENG, BAI HAI-YANG, JIN DUO
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  • CeNiSn是一种很有趣的重费米子化合物,其基态为Kondo绝缘体.采用化学元素替代的方法研 究Cu掺杂对CeNiSn多晶样品低温比热的影响.在流动高纯氩气的保护下,用电弧炉制备了一 系列的多晶样品CeNi1-xCuxSn(x=0,002,006,008).X射 线粉末衍射分析表明,制备出来的样品均为单相多晶.随着Cu掺杂量的增加,样品的晶格参 数增大.采用绝热热脉冲法测量样品的比热,结果表明随着Cu掺入量的增加,相应样品的低温比热也随之增大,能隙逐渐减小
    CeNiSn is an interesting heavy fermion compound,with its ground state being a Kondo insulator.The effect of the substitution of Ni by Cu on the specific heat of CeNi1-xCuxSn polycrystal samples is studied through the m ethod of chemical element substitution.A series of samples (x=00,0.02,0.06,0.0 6) were prepared with an electric arc furnace in the atmosphere of flowing high purity argon gas.X-ray powder diffraction analysis shows that all the final samp les have single-phase structure,and that,with the increase of the substitution a mount of Ni,the crystal parameters of the samples become larger.The specific hea t measurements were performed with an adiabatic colorimeter.The results indicate that the doping of Cu increases the specific heat at low temperature,and that t he V-shape gap is gradually suppressed.The physical mechanism may be that the do ping of copper brings about the Kondo lattice discorder and the increase in 3d e lectrons.
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出版历程
  • 收稿日期:  2000-03-29
  • 刊出日期:  2000-05-05

Cu掺杂对Kondo绝缘体CeNiSn低温比热的影响

  • 1. 中国科学院物理研究所凝聚态中心极低温实验室,北京 100080

摘要: CeNiSn是一种很有趣的重费米子化合物,其基态为Kondo绝缘体.采用化学元素替代的方法研 究Cu掺杂对CeNiSn多晶样品低温比热的影响.在流动高纯氩气的保护下,用电弧炉制备了一 系列的多晶样品CeNi1-xCuxSn(x=0,002,006,008).X射 线粉末衍射分析表明,制备出来的样品均为单相多晶.随着Cu掺杂量的增加,样品的晶格参 数增大.采用绝热热脉冲法测量样品的比热,结果表明随着Cu掺入量的增加,相应样品的低温比热也随之增大,能隙逐渐减小

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