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真空退火对周期性界面掺杂Ni80Co20薄膜磁性的影响

童六牛 何贤美 鹿 牧

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真空退火对周期性界面掺杂Ni80Co20薄膜磁性的影响

童六牛, 何贤美, 鹿 牧

EFFECT OF ANNEALING ON THE MAGNETIC PROPERTIES OF Ni80Co20 THIN FILMS WITH IMPURITY LAYERS

TONG LIU-NIU, HE XIAN-MEI, LU MU
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  • 用磁控溅射方法制备了两个具有不同Fe层厚度的[Ni80Co20(L)/Fe(tFe)]N多层膜系列样品,其中tFe=0.1和2nm.研究了两个系列样品的磁及输运性质随Ni80Co20层厚度L的变化关系.在退火态[Ni80Co20(L)/Fe(0.1nm)]N系列样品中,发现各向异性磁电阻(
    The magnetic and transport properties of two series of sputtered [Ni80Co20(L)/Fe(tFe)]N multilayers (MLs) with different Fe layer thickness of tFe=0.1 and 2nm, and varying L were studied and compared with each other. An enhanced anisotropic magnetoresistance (AMR) peak around L=10nm was observed for annealed films with tFe=0.1nm. The position of the enhanced AMR peak is the same as that of transversal MR peak for the deposited MLs with tFe=2nm. For the as-deposited films with impurity Fe layers, when L becomes lower than the electron mean free path of Ni80Co20 alloy, the zero-field resistivity ρ increases with decreasing L and the increase of ρ will exceed that of AMR (Δρ). The L dependence of ρ can be described by Fuchs-Sondheimer theory. The coercivity Hc of the as-deposited films with tFe=0.1nm increases rapidly with increasing L for L<15nm and is almost saturated for L>15nm. The dependence of Hc on L may be related to the interface structure of MLs, which is indicated by a big drop of Hc in the annealed films. Our experimental data show that the interface scattering in MLs may increase AMR; the magnetic alloy interfacial layers in MLs may change the domain structure and enhance transverse MR and AMR.
    • 基金项目: 安徽省教育委员会自然科学基金(批准号:99J10174)资助的课题.
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  • 文章访问数:  6304
  • PDF下载量:  590
  • 被引次数: 0
出版历程
  • 收稿日期:  2000-04-02
  • 修回日期:  2000-06-13
  • 刊出日期:  2000-11-20

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