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中国物理学会期刊

Ga6N6团簇结构性质的理论计算研究

CSTR: 32037.14.aps.53.1044

Theoretical calculation of structures and properties of Ga6N6 cluster

CSTR: 32037.14.aps.53.1044
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  • 在密度泛函理论的基础上,对Ga6N6团簇进行了第一性原理、全电子、从头计算,得到了10种可能的三维空间结构及其电子结构.其中最稳定结构的一对GaN原子的平均结合能为9.748 eV,因此是可能存在的.但与他人计算的Ga3N3和Ga5N5相比,Ga6N6团簇可能不属于“幻数”团簇.最稳定结构的Ga6N6

     

    The first principle, all-electron, ab initio calculations have been performed for cluster Ga6N6, based on the density functional theory. Ten possible structures and related electronic structures are obtained. For the most stable structure, the mean binding energy of a pair atoms of GaN is 9.748 eV, so the structure may exist. Compared with the results of clusters Ga3N3 and Ga5N5 calculated by other people, however, the cluster Ga6N6 may not be the “magic number” cluster. The Fermi level of cluster Ga6N6 in the most stable structure is partly occupied with EF=-5.2972 eV, which means “metallicity”. The cluster Ga6N6 has no spin magnetic moment. The electron affinity, ionization energy, and transition energies of cluster Ga6N6 are also calculated. This work should be helpful to the complete study of structures and properties of clusters GanNn.

     

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