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通过sol-gel法在Si (111) 基片上分别制备了LaNiO3(LNO)底电极和LaNiO3/La0.3Sr0.7TiO3 (LNO/LSTO)底电极.然后采用sol-gel 方法，在两种衬底上分别制备了Pb (Zr0.5Ti0.5)O3 (PZT)铁电薄膜.XRD分析表明，两种PZT薄膜均具有钙钛矿结构，且在LNO底电极上的PZT薄膜呈(100) 择优取向，而在LNO/LSTO底电极上的PZT薄膜呈随机取向.铁电性能测试表明，相对LNO衬底上制备的PZT薄膜，在LNO/LSTO底电极上制备的PZT薄膜的剩余极化强度得到了有效的增强，同时矫顽场也增大.介电常数和漏电流的测试表明，LNO/LSTO底电极上制备的PZT薄膜具有大的介电常数和漏电流.
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关键词:
- PZT薄膜 /
- 铁电性 /
- 漏电流 /
- La0.3Sr0.7TiO3
LaNiO3(LNO) and LaNiO3/La0.3Sr0.7TiO3 (LNO/LSTO) bottom electrodes were prepared on Si(111) substrates by sol-gel process. Then Pb (Zr0.5Ti0.5)O3 (PZT) ferroelectric films were then deposited on the bottoms also by sol-gel process. XRD showed that both of the PZT films have perovskite structure. The one on LNO bottom adopts (100) preferred orientation and the one on LNO/LSTO bottom adopts random orientation. The results of ferroelectric measurement showed that the ferroelectricity of the PZT film on LNO/LSTO bottom electrode was substantially enhanced compare with the one on LNO bottom electrode. The coercive field was also enhanced. The film on LNO/LSTO bottom electrode has larger dielectric constant and leakage current.-
Keywords:
- PZT film /
- ferroelecticity /
- leakage current /
- La0.3Sr0.7TiO3
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中国物理学会期刊
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