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中国物理学会期刊

InGaAs/GaAs量子点阵列中的能级计算

CSTR: 32037.14.aps.56.5429

Calculation of energy levels in InGaAs/GaAs quantum dot array

CSTR: 32037.14.aps.56.5429
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  • 根据八带k·p理论,在三维InGaAs/GaAs量子点阵列中求解kx=ky=kz=0处的有效质量哈密顿H0的本征值,得到InGaAs量子点中导带中电子基态EC1,第一激发态EC2和重空穴态EHH1 

    The subbands of the ground state EC1, the first excited state EC2 and heavy hole state EHH1 are calculated by solving the eigenvalues of effective-mass Hamiltonian H0 which is derived from eight-band k·p theory and the calculations are performed at kx=ky=kz=0 for the three-dimensional array of InGaAs/GaAs quantum dots (QDs). With indium content in InGaAs QDs gradually increasing from 30% to 100%, the intersubband transition wavelength of EC2 to EC1 blue-shifts from 18.50 to 11.87 μm,while the transition wavelength of EC1 to EHH1 red-shifts from 1.04 to 1.73 μm. With the sizes of In0.5Ga0.5As and InAs QDs increasing from 1.0 to 5.0 nm, the intersubband transition from EC1 to EC2 transforms from bound-state-to-continuum-state to bound-state-to-bound-state, and the corresponding intersubband transition wavelengths red-shift from 8.12 μm (5.90 μm) to 53.47 μm (31.87 μm), respectively, and the transition wavelengths of EC1 to EHH1 red-shift from 1.13 μm (1.60 μm) to 1.27 μm (2.01 μm), respectively.

     

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