To obtain poly-Si with good uniformity and stability, a new method of solution-based metal-induced crystallization (S-MIC) with surface-embellishment wasproposed in this paper. A special solution that can embellish the surface of a-Si was employed to improve the conglutination between nickel and a-Si thin film. Before the nickel solution was spin coated, the special solution was spin coated on the a-Si sample at first. By controlling the nickel salt concentration, the poly-Si with grain size of 20—70 μm and good uniformity could be achieved. Furthermore, the nickel salt concentration is lower than that used in the traditional method of S-MIC by 1 or 2 orders of magnitude.