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中国物理学会期刊

ITO/有机半导体/金属结构OLED器件的数值模拟

CSTR: 32037.14.aps.57.5928

Numerical model of ITO /organic semiconductor/metal organic light emitting device

CSTR: 32037.14.aps.57.5928
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  • 基于稳态的小信号漂移扩散方程,建立了有电极的单层有机电致发光(OLED)器件的数值模型,编制的MATLAB程序,首先模拟了文献中的OLED器件电极附近正电荷层(面电荷)对器件J-V的影响,得到了和文献中一致的结果. 模拟了ITO/PPV/Ca结构的OLED器件,模拟时,考虑了OLED阳极附近存在正体电荷,得到的J-V曲线和文献中的实验结果一致,体电荷产生了势垒,影响了电流曲线.

     

    A numerical model of organic light emitting device (OLED) with metal/organic/metal structure was discussed on the basis of drift-diffusion equations in this paper. First,the influence of charges localized near the electrodes to the J-V curve was calculated and we got the same result of the literature. Second, the J-V curve of OLED with structure of ITO/PPV/Ca was simulated. In the simulation, the case of positive charge distribution localized near the anode was considered. The calculated J-V curve was in good agreement with the experiment. The charge creates an additional barrier and has a noted influence on the current density.

     

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