The μc-Si:H films were deposited by VHF-PECVD, the effects of silane concentration, power density, deposition pressure and total flow rate on the deposition rate and crystallization of μc-Si:H were extensively studied. Phase diagram in the plot of deposition pressure against power was determined. The deposition rate of μc-Si:H has reached 0.75nm/s. Incorporating such μc-Si:H films as i-layer, the single-junction solar cell on glass substrate showed an conversion efficiency of 5.5%.