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采用电弧熔炼法在高纯氩气保护下合成了一系列TbGa1-xGex(0≤x≤0.4)样品. X射线粉末衍射数据表明,样品均为正交晶系的CrB型结构,空间群为Cmcm. TbGa1-xGex化合物的晶格常数随Ge含量的增加而线性减小,TbGa和TbGe赝二元系在0≤x≤0.4范围内形成固溶体. 化合物的顺磁居里温度以及有效磁矩由热磁测量结果确定. 相变温度由交流磁化率的测量获得. 随Ge含量的增加,化合物的相变温度单调下降. 变温X射线粉末衍射实验表明,x=0.2和0.3的样品在110—273K范围内无结构相变.
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关键词:
- TbGa-TbGe 赝二元系 /
- CrB结构 /
- 居里温度 /
- 磁化强度
Polycrystalline samples of TbGa1-xGex(x≤0.4) have been prepared by arc-melting. X-ray powder diffraction reveals that all the samples crystallize in a single phase of CrB-type structure and space group Cmcm. The lattice constants of the compounds decrease linearly with the increasing Ge content. The compounds form a solid solution in the Ge content range of 0≤x≤0.4. The asymptotic Curie points and the effective paramagnetic moments of the compounds have been determined by thermomagnetic measurements. The ordering temperatures were derived from ac susceptibility data. The XRD patterns at various temperatures reveal that there is no structure phase transition in the samples with x=0.2 and 0.3 in the temperature range of 113—273K.
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