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中国物理学会期刊

大气压等离子体辅助多晶硅薄膜化学气相沉积参数诊断

CSTR: 32037.14.aps.59.2653

Diagnostics of the atmospheric pressure plasma jets for plasma enhanced chemical vapor deposition of polycrystalline silicon thin film

CSTR: 32037.14.aps.59.2653
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  • 本文采用发射光谱法诊断了大气压下Ar气、SiCl4及H2气混合气体(Ar/SiCl4/H2)射频放电等离子体射流特性.利用Si原子谱线强度计算了电子激发温度并以此估算了Si原子数密度,研究了射频功率及气体流量对电子激发温度和Si原子数密度以及SiCl4解离率的作用.

     

    The characteristics of the radio frequency plasma jets at atmospheric pressure in Ar/SiCl4/H2 gas mixture were studied in this paper by using optical emission spectroscopy. Firstly, the electron excitation temperature of plasmas was calculated from the Si atom spectral emission using Boltzmann plots, and then, based on the temperature, the number density of the Si atoms in the plasmas and the dissociation ratio of the SiCl4 were estimated. Finally, the dependence of the excitation temperature, the number density of the Si atoms and the dissociation ratio of the SiCl4 on the discharge power and the gas flow rate were presented.

     

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