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The electrical transport properties of Ca3Co4O9 could be modified by doping in the Ca site. The Ca site doped Ca3-xAgxCo4O9(x=0—005) bulk samples were fabricated by citric acid sol-gel and spark plasma sintering method. The resulting samples were analyzed by X-ray power diffraction, scanning electron microscopy and electrical constant measurement. The results showed that all samples were single phased, the prefered orientation was lowered by Ag doping for Ca. The x=003 sample exhibited highest grain orientation among doped samples, which exhibited layered microstructure. Its electrical resistivity was increased and then decreased slightly by Ag doping, but the transport mechanism was not changed. However, the doped samples exhibited high electrical resistivity caused by changed electronic structure by Ag doping for Ca. The x=004 sample exhibited highest electrical resistivity in the measuring temperature region with the highest value 146 mΩ·cm at 973 K.
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Keywords:
- Ca3Co4O9 /
- doping /
- electrical transport
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[14] ]Wang Z L, Kang Z C 1998 Functional and Smart Materials: Structural Evolution and Structure Analysis (New York: Plenum) p121
[15] ]Lotgering F K 1959 J. Inog. Nucl. Chem. 9 113
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[17] ]Prevel M, Perez O, Noudem J G 2007 Solid State Sci. 9 231
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[19] ]Mott N F, Jones H 1958 The Theory of the Properties of Metals and Alloys (New York: Dover) p305
[20] ]Liu E K, Zhu B S, Luo J S 2008 Semiconductor Physics (Beijing: National Defense Industry Press) pp61—74 (in Chinese) [刘恩科、朱秉升、罗晋升 2008 半导体物理学 (北京: 国防工业出版社) 第61—74页]
[1] [1]Shikano M, Funahashi R 2003 Appl. Phys. Lett. 82 1581
[2] [2]Funahashi R, Matsubara I, Ikuta H 2000 Jpn. J. Appl. Phys. 39 L1127
[3] [3]Masset A C, Michel C, Maignan A, Hervieu M, Toulemoude O, Studer F, Raveau B 2000 Phys. Rev. B 62 166
[4] [4]Wang Y, Sui Y, Chen J G, Wang X, Miao J, Liu Z, Qian Z, Su W 2008 J. Alloys Compd. 448 1
[5] [5]Mikami M, Ando N, Funahashi R 2005 J. Solid State Chem. 178 2186
[6] [6]Lu Q M, Zhang J X, Zhang Q Y 2006 International Conference on Thermoelectrics (Piscateway:IEEE) p66
[7] [7]Chen X Y, Xu X F, Hu R X, Ren Z, Xu Z A, Cao G H 2007 Acta Phys. Sin. 56 1627 (in Chinese)[陈晓阳、徐象繁、胡荣星、任之、许祝安、曹光旱 2007 物理学报 56 1627]
[8] [8]Zhang F P, Lu Q M, Zhang J X, Zhang X 2009 J. Alloys Compd. 470 543
[9] [9]Zhang F P, Lu Q M, Zhang J X, Zhang X 2009 Acta Phys. Sin.58 240 (in Chinese) [张飞鹏、路清梅、张久兴、张忻 2009物理学报 58 240]
[10] ]Ang R, Sun Y P, Ma Y Q 2006 J. Appl. Phys. 100 063902
[11] ]Zhang Y F, Zhang J X 2008 J. Mater. Proc. Technol. 208 70
[12] ]Zhang Q Y, Lu Q M, Zhang J X 2007 Rare Metal Mater. Eng. 36 413 (in Chinese) [张庆云、 路清梅、 张久兴 2007 稀有金属材料与工程 36 413]
[13] ]Zhang F P, Zhang J X, Lu Q M, Zhang X, Liu Y Q 2009 Acta Phys. Chim. Sin. 25 1009 (in Chinese) [张飞鹏、张久兴、路清梅、张忻、刘燕琴 2009 物理化学学报 25 1009]
[14] ]Wang Z L, Kang Z C 1998 Functional and Smart Materials: Structural Evolution and Structure Analysis (New York: Plenum) p121
[15] ]Lotgering F K 1959 J. Inog. Nucl. Chem. 9 113
[16] ]Miyazaki Y, Onoda M, Oku T, Kikuchi M, Ishii Y, Ono Y, Morii Y, Kajitani T 2002 J. Phys. Soc. Jpn. 71 491
[17] ]Prevel M, Perez O, Noudem J G 2007 Solid State Sci. 9 231
[18] ]Prevel M, Lemonnier S, Klein Y, Hébert S, Chateigner D 2005 J. Appl. Phys. 98 093706
[19] ]Mott N F, Jones H 1958 The Theory of the Properties of Metals and Alloys (New York: Dover) p305
[20] ]Liu E K, Zhu B S, Luo J S 2008 Semiconductor Physics (Beijing: National Defense Industry Press) pp61—74 (in Chinese) [刘恩科、朱秉升、罗晋升 2008 半导体物理学 (北京: 国防工业出版社) 第61—74页]
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