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Ca3-x AgxCo4O9(x=0—0.05)氧化物的电输运性能

张飞鹏 张忻 路清梅 张久兴

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Ca3-x AgxCo4O9(x=0—0.05)氧化物的电输运性能

张飞鹏, 张忻, 路清梅, 张久兴

Electrical transport properties of Ca3-xAgxCo4O9(x=0—0.05) oxide

Zhang Fei-Peng, Zhang Xin, Lu Qing-Mei, Zhang Jiu-Xing
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  • Ca位掺杂可以优化Ca3Co4O9复合氧化物的电输运性能. 采用柠檬酸溶胶凝胶结合放电等离子烧结制备了Ca位微量掺杂Ag的Ca3-xAgxCo4O9(x=0—005)氧化物块体试样,通过X射线衍射、扫描电子显微镜、电参数测试仪分析了所得试样. 试验结果表明: 产物呈单一物相,Ca位微量掺杂Ag降低了Ca
    The electrical transport properties of Ca3Co4O9 could be modified by doping in the Ca site. The Ca site doped Ca3-xAgxCo4O9(x=0—005) bulk samples were fabricated by citric acid sol-gel and spark plasma sintering method. The resulting samples were analyzed by X-ray power diffraction, scanning electron microscopy and electrical constant measurement. The results showed that all samples were single phased, the prefered orientation was lowered by Ag doping for Ca. The x=003 sample exhibited highest grain orientation among doped samples, which exhibited layered microstructure. Its electrical resistivity was increased and then decreased slightly by Ag doping, but the transport mechanism was not changed. However, the doped samples exhibited high electrical resistivity caused by changed electronic structure by Ag doping for Ca. The x=004 sample exhibited highest electrical resistivity in the measuring temperature region with the highest value 146 mΩ·cm at 973 K.
    • 基金项目: 国家自然科学基金(批准号: 50702003, 50801002)资助的课题.
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    ]Wang Z L, Kang Z C 1998 Functional and Smart Materials: Structural Evolution and Structure Analysis (New York: Plenum) p121

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    ]Lotgering F K 1959 J. Inog. Nucl. Chem. 9 113

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    ]Miyazaki Y, Onoda M, Oku T, Kikuchi M, Ishii Y, Ono Y, Morii Y, Kajitani T 2002 J. Phys. Soc. Jpn. 71 491

    [17]

    ]Prevel M, Perez O, Noudem J G 2007 Solid State Sci. 9 231

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    ]Prevel M, Lemonnier S, Klein Y, Hébert S, Chateigner D 2005 J. Appl. Phys. 98 093706

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    ]Liu E K, Zhu B S, Luo J S 2008 Semiconductor Physics (Beijing: National Defense Industry Press) pp61—74 (in Chinese) [刘恩科、朱秉升、罗晋升 2008 半导体物理学 (北京: 国防工业出版社) 第61—74页]

  • [1]

    [1]Shikano M, Funahashi R 2003 Appl. Phys. Lett. 82 1581

    [2]

    [2]Funahashi R, Matsubara I, Ikuta H 2000 Jpn. J. Appl. Phys. 39 L1127

    [3]

    [3]Masset A C, Michel C, Maignan A, Hervieu M, Toulemoude O, Studer F, Raveau B 2000 Phys. Rev. B 62 166

    [4]

    [4]Wang Y, Sui Y, Chen J G, Wang X, Miao J, Liu Z, Qian Z, Su W 2008 J. Alloys Compd. 448 1

    [5]

    [5]Mikami M, Ando N, Funahashi R 2005 J. Solid State Chem. 178 2186

    [6]

    [6]Lu Q M, Zhang J X, Zhang Q Y 2006 International Conference on Thermoelectrics (Piscateway:IEEE) p66

    [7]

    [7]Chen X Y, Xu X F, Hu R X, Ren Z, Xu Z A, Cao G H 2007 Acta Phys. Sin. 56 1627 (in Chinese)[陈晓阳、徐象繁、胡荣星、任之、许祝安、曹光旱 2007 物理学报 56 1627]

    [8]

    [8]Zhang F P, Lu Q M, Zhang J X, Zhang X 2009 J. Alloys Compd. 470 543

    [9]

    [9]Zhang F P, Lu Q M, Zhang J X, Zhang X 2009 Acta Phys. Sin.58 240 (in Chinese) [张飞鹏、路清梅、张久兴、张忻 2009物理学报 58 240]

    [10]

    ]Ang R, Sun Y P, Ma Y Q 2006 J. Appl. Phys. 100 063902

    [11]

    ]Zhang Y F, Zhang J X 2008 J. Mater. Proc. Technol. 208 70

    [12]

    ]Zhang Q Y, Lu Q M, Zhang J X 2007 Rare Metal Mater. Eng. 36 413 (in Chinese) [张庆云、 路清梅、 张久兴 2007 稀有金属材料与工程 36 413]

    [13]

    ]Zhang F P, Zhang J X, Lu Q M, Zhang X, Liu Y Q 2009 Acta Phys. Chim. Sin. 25 1009 (in Chinese) [张飞鹏、张久兴、路清梅、张忻、刘燕琴 2009 物理化学学报 25 1009]

    [14]

    ]Wang Z L, Kang Z C 1998 Functional and Smart Materials: Structural Evolution and Structure Analysis (New York: Plenum) p121

    [15]

    ]Lotgering F K 1959 J. Inog. Nucl. Chem. 9 113

    [16]

    ]Miyazaki Y, Onoda M, Oku T, Kikuchi M, Ishii Y, Ono Y, Morii Y, Kajitani T 2002 J. Phys. Soc. Jpn. 71 491

    [17]

    ]Prevel M, Perez O, Noudem J G 2007 Solid State Sci. 9 231

    [18]

    ]Prevel M, Lemonnier S, Klein Y, Hébert S, Chateigner D 2005 J. Appl. Phys. 98 093706

    [19]

    ]Mott N F, Jones H 1958 The Theory of the Properties of Metals and Alloys (New York: Dover) p305

    [20]

    ]Liu E K, Zhu B S, Luo J S 2008 Semiconductor Physics (Beijing: National Defense Industry Press) pp61—74 (in Chinese) [刘恩科、朱秉升、罗晋升 2008 半导体物理学 (北京: 国防工业出版社) 第61—74页]

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出版历程
  • 收稿日期:  2009-09-17
  • 修回日期:  2009-10-28
  • 刊出日期:  2010-03-05

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