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晶硅太阳电池中Fe-B对与少子寿命、陷阱浓度及内量子效率的相关性

李凤 马忠权 孟夏杰 殷晏庭 于征汕 吕鹏

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晶硅太阳电池中Fe-B对与少子寿命、陷阱浓度及内量子效率的相关性

李凤, 马忠权, 孟夏杰, 殷晏庭, 于征汕, 吕鹏

Influence of Fe-B pairs on minority carrier lifetime, trapping density and internal quantum efficiency in mono-crystal Si solar cells

Li Feng, Ma Zhong-Quan, Meng Xia-Jie, Yin Yan-Ting, Yu Zheng-Shan, Lü Peng
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  • 以太阳电池级直拉单晶硅片为材料,利用瞬态微波反射光电导衰减仪研究了硅片分别经过单、双面扩散后Fe-B对与少子寿命τ、陷阱浓度及制备成电池的内量子效率(IQE)的相关性.对于单面扩散后的样品,Fe-B对浓度分布在较大程度上决定了少子寿命分布;对于双面扩散后的样品,Fe-B对浓度显著降低(在135×1011 cm-3左右),已不及其他杂质和缺陷对少子寿命的影响.结合瞬态微波衰减信号和陷阱模型,对单、双面吸杂前后硅片的陷阱浓度进行数值计算,发现经过扩散
    Solar-grade p-type Czochralski silicon wafers are doped with phosphorus by single-face and double-face diffusions, and the influence of Fe-B pairs on the minority carrier lifetime, the trapping centers density and the internal quantum efficiency (IQE) of cells (fabricated from the wafers) is analyzed by measuring microwave-detected photo-conductance decay minority carrier lifetime. In the doped wafers with single-face diffusion, the minority carrier lifetime is determined mainly by the density distribution of Fe-B pairs. However, in the doped wafers with double-face diffusion, the minority carrier lifetime is less influenced by the concentration distribution of Fe-B pairs than by other impurities and defects. Numerical calculation based on the combination of the transient voltage signal and the trapping model indicates that the density of trapping centers is reduced by either of diffusion process. On the other hand, detailed analysis of selected specific spots in one wafer with single-face diffusion shows that Fe-B pairs are not the major factor influencing the density of trapping centers. The wafers with different diffusion processes are fabricated into c-Si solar cells and the IQE is measured by using a light beam induced current. The results show that the IQEs of cells with double-face diffusion are higher than those with single-face diffusion, which demonstrates the negative effect of Fe-B pairs on the IQE of solar cells.
    • 基金项目: 国家自然科学基金(批准号:60876045)、上海市重点学科建设基金(批准号:S30105)、上海市科学技术委员会基础研究重点项目(批准号:09JC1405900)和上海大学研究生创新基金(批准号:SHUCX091012)资助的课题.
    [1]

    [1]Davis J R, Rohatgi A, Hopkins R H, Blais P D, Choudhury P R, McCormick J R, Mollenkoff H C 1980 IEEE Trans. Electron. Dev. 27 677

    [2]

    [2]Macdonald D H, Geerligs L J 2004 Appl. Phys. Lett. 85 4061

    [3]

    [3]Macdonald D H, Geerligs L J, Azzizi A 2004 J. Appl. Phys. 95 1021

    [4]

    [4]Terakawa T, Wang D, Nakashima H 2005 Jpn. J. Appl. Phys. 44 4060

    [5]

    [5]Geerligs L J 2003 3rd World Conference on Photovoltaic Energy Conversion (Osaka: Arisumi Printing Incorporated) p1044

    [6]

    [6]Cuevas A, Stocks M, Macdonald D, Kerr M, Samundsett C 1999 IEEE Trans. Electron. Dev. 46 2026

    [7]

    [7]Wang H, Yang H, Wu H C, Yu H C 2006 J. Mater. Sci. 41 1905

    [8]

    [8]Yang D R 2007 Solar Cell Materials (Beijing: Chemistry Industry Press) p130 (in Chinese) [杨德仁 2007 太阳电池材料 (北京:化学工业出版社) 第130页]

    [9]

    [9]Macdonald D H, Cuevas A 2001 Sol. Energy Mater. Sol. Cells 65 509

    [10]

    ]Macdonald D H 2001 Ph. D. Dissertation (Canberra: The Australian National University)

    [11]

    ]Li B, Liu C, Feng L H, Zhang J Q, Zhen J G, Cai Y P, Cai W, Wu L L, Li W, Lei Z, Zeng G G, Xia G P 2009 Acta Phys. Sin. 58 1987 (in Chinese) [黎兵、刘才、冯良桓、张静全、郑家贵、蔡亚平、蔡伟、武莉莉、李卫、雷智、曾广根、夏庚培 2009 物理学报 58 1987]

    [12]

    ]Li Y J, Zhen J G, Feng L H, Li B, Zeng G G, Cai Y P, Zhang J Q, Li W, Lei Z, Wu L L, Cai W 2010 Acta Phys. Sin. 59 625 (in Chinese) [李愿洁、郑家贵、冯良桓、黎兵、曾广根、蔡亚平、张静全、李卫、雷智、武莉莉、蔡伟 2010 物理学报 59 625]

    [13]

    ]Zhang X, Hu J M, Wu Y Y, Lu F 2009 J. Phys. D 42 145401

    [14]

    ]Hornbeck J A, Haynes J R 1955 Phys. Rev. 97 311

    [15]

    ]Macdonald D H, Cuevas A 1999 Appl. Phys. Lett. 74 1710

    [16]

    ]Schmidt J, Bothe K, Hezel R 2002 Appl. Phys. Lett. 80 4395

    [17]

    ]Dekkers H F W, Carnel L, Beaucame G 2006 Appl. Phys. Lett. 89 013508

    [18]

    ]Lauer K, Laades A, bensee H, Metzner H, Lawerenz A 2008 J. Appl. Phys. 104 104503

    [19]

    ]Zoth G, Bergholz W 1990 J. Appl. Phys. 67 6764

    [20]

    ]Macdonald D H, Cuevas A, Leung J W 2001 J. Appl. Phys. 89 7932

    [21]

    ]Green M A 1990 J. Appl. Phys. 67 2944

  • [1]

    [1]Davis J R, Rohatgi A, Hopkins R H, Blais P D, Choudhury P R, McCormick J R, Mollenkoff H C 1980 IEEE Trans. Electron. Dev. 27 677

    [2]

    [2]Macdonald D H, Geerligs L J 2004 Appl. Phys. Lett. 85 4061

    [3]

    [3]Macdonald D H, Geerligs L J, Azzizi A 2004 J. Appl. Phys. 95 1021

    [4]

    [4]Terakawa T, Wang D, Nakashima H 2005 Jpn. J. Appl. Phys. 44 4060

    [5]

    [5]Geerligs L J 2003 3rd World Conference on Photovoltaic Energy Conversion (Osaka: Arisumi Printing Incorporated) p1044

    [6]

    [6]Cuevas A, Stocks M, Macdonald D, Kerr M, Samundsett C 1999 IEEE Trans. Electron. Dev. 46 2026

    [7]

    [7]Wang H, Yang H, Wu H C, Yu H C 2006 J. Mater. Sci. 41 1905

    [8]

    [8]Yang D R 2007 Solar Cell Materials (Beijing: Chemistry Industry Press) p130 (in Chinese) [杨德仁 2007 太阳电池材料 (北京:化学工业出版社) 第130页]

    [9]

    [9]Macdonald D H, Cuevas A 2001 Sol. Energy Mater. Sol. Cells 65 509

    [10]

    ]Macdonald D H 2001 Ph. D. Dissertation (Canberra: The Australian National University)

    [11]

    ]Li B, Liu C, Feng L H, Zhang J Q, Zhen J G, Cai Y P, Cai W, Wu L L, Li W, Lei Z, Zeng G G, Xia G P 2009 Acta Phys. Sin. 58 1987 (in Chinese) [黎兵、刘才、冯良桓、张静全、郑家贵、蔡亚平、蔡伟、武莉莉、李卫、雷智、曾广根、夏庚培 2009 物理学报 58 1987]

    [12]

    ]Li Y J, Zhen J G, Feng L H, Li B, Zeng G G, Cai Y P, Zhang J Q, Li W, Lei Z, Wu L L, Cai W 2010 Acta Phys. Sin. 59 625 (in Chinese) [李愿洁、郑家贵、冯良桓、黎兵、曾广根、蔡亚平、张静全、李卫、雷智、武莉莉、蔡伟 2010 物理学报 59 625]

    [13]

    ]Zhang X, Hu J M, Wu Y Y, Lu F 2009 J. Phys. D 42 145401

    [14]

    ]Hornbeck J A, Haynes J R 1955 Phys. Rev. 97 311

    [15]

    ]Macdonald D H, Cuevas A 1999 Appl. Phys. Lett. 74 1710

    [16]

    ]Schmidt J, Bothe K, Hezel R 2002 Appl. Phys. Lett. 80 4395

    [17]

    ]Dekkers H F W, Carnel L, Beaucame G 2006 Appl. Phys. Lett. 89 013508

    [18]

    ]Lauer K, Laades A, bensee H, Metzner H, Lawerenz A 2008 J. Appl. Phys. 104 104503

    [19]

    ]Zoth G, Bergholz W 1990 J. Appl. Phys. 67 6764

    [20]

    ]Macdonald D H, Cuevas A, Leung J W 2001 J. Appl. Phys. 89 7932

    [21]

    ]Green M A 1990 J. Appl. Phys. 67 2944

计量
  • 文章访问数:  6644
  • PDF下载量:  855
  • 被引次数: 0
出版历程
  • 收稿日期:  2009-07-30
  • 修回日期:  2010-01-15
  • 刊出日期:  2010-03-05

晶硅太阳电池中Fe-B对与少子寿命、陷阱浓度及内量子效率的相关性

  • 1. (1)上海大学物理系,上海 200444; (2)上海索朗太阳能科技有限公司,上海 200120
    基金项目: 国家自然科学基金(批准号:60876045)、上海市重点学科建设基金(批准号:S30105)、上海市科学技术委员会基础研究重点项目(批准号:09JC1405900)和上海大学研究生创新基金(批准号:SHUCX091012)资助的课题.

摘要: 以太阳电池级直拉单晶硅片为材料,利用瞬态微波反射光电导衰减仪研究了硅片分别经过单、双面扩散后Fe-B对与少子寿命τ、陷阱浓度及制备成电池的内量子效率(IQE)的相关性.对于单面扩散后的样品,Fe-B对浓度分布在较大程度上决定了少子寿命分布;对于双面扩散后的样品,Fe-B对浓度显著降低(在135×1011 cm-3左右),已不及其他杂质和缺陷对少子寿命的影响.结合瞬态微波衰减信号和陷阱模型,对单、双面吸杂前后硅片的陷阱浓度进行数值计算,发现经过扩散

English Abstract

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