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低维半导体异质结中的量子相干红外发射机理理论研究

孙伟峰 李美成 赵连城

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低维半导体异质结中的量子相干红外发射机理理论研究

孙伟峰, 李美成, 赵连城

Theoretical investigation of infrared generation mechanism by quantum coherence in low-dimensional semiconductor heterostructures

Sun Wei-Feng, Li Mei-Cheng, Zhao Lian-Cheng
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  • 给出了一种在非粒子反转条件下量子阱和量子点激光器的红外发射机理. 此种红外发射是基于在同一作用区产生并作为红外场相干源的两种带间跃迁激光场的共振非线性混合. 这种频率下转换机理并不依赖于在半导体激活媒质中的长时相干假定条件,在室温和泵注入电流条件下仍然有效. 频率下转换的固有效率可以达到相当于每个可见光子产生一个红外光子的量子极限值. 根据红外发射的可参变特性,这种非粒子反转的方法尤其适用于长波红外工作范围.
    We present an infrared generation mechanism without population inversion between subbands in quantum well and quantum dot lasers. The infrared generation scheme is based on the resonant nonlinear mixing of the two optical laser fields. These two optical fields come from two interband transitions in the same active region and serve as the coherent drive for infrared field. This mechanism of frequency down conversion should work efficiently at room temperature with injection current pumping, not relying on any ad hoc assumptions of long-lived coherence in the semiconductor active medium. Under optimized waveguide and cavity parameters, the intrinsic down-conversion efficiency can reach the limiting quantum value corresponding to one infrared photon generated by one optical photon. Because the proposed infrared generation is parametric, the proposed scheme without population inversion is especially promising for long-wavelength infrared operation.
    • 基金项目: 国家自然科学基金(批准号:50502014,50972032),国家高技术研究发展计划(批准号:2009AA03Z407)资助的课题.
    [1]

    Faist J, Capasso F, Sivco D L, Sirtori C, Hutchinson A L, Cho A Y 1994 Science 264 553

    [2]

    Khan-ngern S, Larkin I A 2000 Phys. Lett. A 266 209

    [3]

    Boucaud P, Sauvage S, Houel J 2008 C. R. Physique 9 840

    [4]

    Singh J 1996 IEEE Photonics Technol. Lett. 8 488

    [5]

    Kisin M V, Stroscio M A, Belenky G, Luryi S 2002 Physica B 316-317 223

    [6]

    Kapon E 1999 Semiconductor Lasers (San Diego: Academic Press)

    [7]

    Li S S, Su Y K 1998 Intersubband Transitions in Quantum Wells: Physics and Devices (Boston: Kluwer)

    [8]

    Sirtori C, Nagle J 2003 C. R. Physique 4 639

    [9]

    Capasso F, Gmachl C, Tredicucci A, Hutchinson A L, Sivco D L, Cho A Y 1999 Opt. Photonics News 10 33

    [10]

    Kono J, Su M Y, Cerne J, Sherwin M S, Allen Jr S J, Inoshita T, Noda T, Sakaki H 1998 Nucl. Instrum. Meth. B 144 115

    [11]

    Harris S E 1989 Phys. Rev. Lett. 62 1033 Scully M O, Zhu S Y, Gavrielides A 1989 Phys. Rev. Lett. 62 2813 Scully M O, Zubairy M S 1997 Quantum Optics (Cambridge: Cambridge University Press)

    [12]

    Imamoglu A, Ram R J 1994 Opt. Lett. 19 1744 Schmidt H, Nikonov D E, Campman K L, Maranowski K D, Gossard A C, Imamoglu A 1999 Laser Phys. 9 797

    [13]

    Hao X Y, Li J H, Yang X X 2009 Opt. Commun. 282 3339

    [14]

    Vanier J, Godone A, Levi F 1998 Phys. Rev. A 58 2345

    [15]

    Korsunsky E A, Kosachov D V 2000 J. Opt. Soc. Am. B 17 1405

    [16]

    Johnson N F, Ehrenreich H, Hui P M, Young P M 1990 Phys. Rev. B 41 3655

    [17]

    Heller E R, Fisher K, Szmulowicz F 1995 J. Appl. Phys. 77 5739

    [18]

    Kim S H, Li S S 2003 Physica E 16 199

    [19]

    Hales V J, Poulter A J, Nicholas R J 2000 Physica E 7 84

    [20]

    Joullié A, Christol P 2003 C. R. Physique 4 621

    [21]

    Mowbray D J, Harris L, Fry P W, Ashmore A D, Parnell S R, Finley J J, Skolnick M S, Hopkinson M, Hill G, Clark J 2000 Physica E 7 489

    [22]

    Songmuang R, Kiravittaya S, Sawadsaringkarn M, Panyakeow S, Schmidt O G 2003 J. Cryst. Growth 251 166

    [23]

    Tokuda Y, Tsukada N, Fujiwara K, Nakayama T 1986 Appl. Phys. Lett. 49 1629

    [24]

    Chen T R, Zhuang Y, Xu Y J, Zhao B, Yariv A, Ungar J, Oh S 1992 Appl. Phys. Lett. 60 2954

    [25]

    Chow W W, Koch S W 1999 Semiconductor-Laser Fundamentals (Berlin: Springer)

    [26]

    Joshi A, Xiao M 2006 Prog. Opt. 49 97

    [27]

    Lukin M D, Hemmer P R, Scully M O 2000 Adv. At. Mol. Opt. Phys. 42 347

    [28]

    Hartig M, Ganiere J D, Selbmann P E, Devaud B, Rota L 1999 Phys. Rev. B 60 1500

    [29]

    Jensen B, Palik E D 1985 Handbook of Optical Constants of Solids (Orlando FL: Academic)

    [30]

    Heitz R, Mukhametaznov I, Born H, Grundmann M, Hoffmann A, Madhukar A, Bimberg D 1999 Physica B 272 8

    [31]

    Fedorov A V, Baranov A V, Rukhlenko I D, Masumoto Y 2003 Solid State Communications 128 219

    [32]

    Bogaart E W, Haverkort J E M, Mano T, Ntzel R, Wolter J H 2006 Physica E 32 163

    [33]

    Sirtori C, Kruck P, Barbieri S, Page H, Nagle J, Beck M, Faist J, Oesterle U 1999 Appl. Phys. Lett. 75 3911

  • [1]

    Faist J, Capasso F, Sivco D L, Sirtori C, Hutchinson A L, Cho A Y 1994 Science 264 553

    [2]

    Khan-ngern S, Larkin I A 2000 Phys. Lett. A 266 209

    [3]

    Boucaud P, Sauvage S, Houel J 2008 C. R. Physique 9 840

    [4]

    Singh J 1996 IEEE Photonics Technol. Lett. 8 488

    [5]

    Kisin M V, Stroscio M A, Belenky G, Luryi S 2002 Physica B 316-317 223

    [6]

    Kapon E 1999 Semiconductor Lasers (San Diego: Academic Press)

    [7]

    Li S S, Su Y K 1998 Intersubband Transitions in Quantum Wells: Physics and Devices (Boston: Kluwer)

    [8]

    Sirtori C, Nagle J 2003 C. R. Physique 4 639

    [9]

    Capasso F, Gmachl C, Tredicucci A, Hutchinson A L, Sivco D L, Cho A Y 1999 Opt. Photonics News 10 33

    [10]

    Kono J, Su M Y, Cerne J, Sherwin M S, Allen Jr S J, Inoshita T, Noda T, Sakaki H 1998 Nucl. Instrum. Meth. B 144 115

    [11]

    Harris S E 1989 Phys. Rev. Lett. 62 1033 Scully M O, Zhu S Y, Gavrielides A 1989 Phys. Rev. Lett. 62 2813 Scully M O, Zubairy M S 1997 Quantum Optics (Cambridge: Cambridge University Press)

    [12]

    Imamoglu A, Ram R J 1994 Opt. Lett. 19 1744 Schmidt H, Nikonov D E, Campman K L, Maranowski K D, Gossard A C, Imamoglu A 1999 Laser Phys. 9 797

    [13]

    Hao X Y, Li J H, Yang X X 2009 Opt. Commun. 282 3339

    [14]

    Vanier J, Godone A, Levi F 1998 Phys. Rev. A 58 2345

    [15]

    Korsunsky E A, Kosachov D V 2000 J. Opt. Soc. Am. B 17 1405

    [16]

    Johnson N F, Ehrenreich H, Hui P M, Young P M 1990 Phys. Rev. B 41 3655

    [17]

    Heller E R, Fisher K, Szmulowicz F 1995 J. Appl. Phys. 77 5739

    [18]

    Kim S H, Li S S 2003 Physica E 16 199

    [19]

    Hales V J, Poulter A J, Nicholas R J 2000 Physica E 7 84

    [20]

    Joullié A, Christol P 2003 C. R. Physique 4 621

    [21]

    Mowbray D J, Harris L, Fry P W, Ashmore A D, Parnell S R, Finley J J, Skolnick M S, Hopkinson M, Hill G, Clark J 2000 Physica E 7 489

    [22]

    Songmuang R, Kiravittaya S, Sawadsaringkarn M, Panyakeow S, Schmidt O G 2003 J. Cryst. Growth 251 166

    [23]

    Tokuda Y, Tsukada N, Fujiwara K, Nakayama T 1986 Appl. Phys. Lett. 49 1629

    [24]

    Chen T R, Zhuang Y, Xu Y J, Zhao B, Yariv A, Ungar J, Oh S 1992 Appl. Phys. Lett. 60 2954

    [25]

    Chow W W, Koch S W 1999 Semiconductor-Laser Fundamentals (Berlin: Springer)

    [26]

    Joshi A, Xiao M 2006 Prog. Opt. 49 97

    [27]

    Lukin M D, Hemmer P R, Scully M O 2000 Adv. At. Mol. Opt. Phys. 42 347

    [28]

    Hartig M, Ganiere J D, Selbmann P E, Devaud B, Rota L 1999 Phys. Rev. B 60 1500

    [29]

    Jensen B, Palik E D 1985 Handbook of Optical Constants of Solids (Orlando FL: Academic)

    [30]

    Heitz R, Mukhametaznov I, Born H, Grundmann M, Hoffmann A, Madhukar A, Bimberg D 1999 Physica B 272 8

    [31]

    Fedorov A V, Baranov A V, Rukhlenko I D, Masumoto Y 2003 Solid State Communications 128 219

    [32]

    Bogaart E W, Haverkort J E M, Mano T, Ntzel R, Wolter J H 2006 Physica E 32 163

    [33]

    Sirtori C, Kruck P, Barbieri S, Page H, Nagle J, Beck M, Faist J, Oesterle U 1999 Appl. Phys. Lett. 75 3911

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出版历程
  • 收稿日期:  2009-11-18
  • 修回日期:  2009-12-07
  • 刊出日期:  2010-09-15

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